IRIS
MARESCA, LUCA
 Distribuzione geografica
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Continente #
AS - Asia 3.334
EU - Europa 2.508
NA - Nord America 2.133
SA - Sud America 456
AF - Africa 57
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 5
Totale 8.499
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Nazione #
US - Stati Uniti d'America 2.005
SG - Singapore 1.708
RU - Federazione Russa 1.177
CN - Cina 870
IT - Italia 686
BR - Brasile 381
VN - Vietnam 275
HK - Hong Kong 204
NL - Olanda 136
DE - Germania 134
KR - Corea 85
FI - Finlandia 79
CA - Canada 77
GB - Regno Unito 71
IN - India 44
FR - Francia 43
IE - Irlanda 39
PL - Polonia 34
MX - Messico 33
AR - Argentina 31
JP - Giappone 28
ES - Italia 23
ZA - Sudafrica 23
EC - Ecuador 17
AT - Austria 16
BD - Bangladesh 15
ID - Indonesia 15
TR - Turchia 14
TW - Taiwan 13
UA - Ucraina 13
SE - Svezia 12
IQ - Iraq 11
VE - Venezuela 9
PK - Pakistan 8
CH - Svizzera 7
AE - Emirati Arabi Uniti 5
CL - Cile 5
PY - Paraguay 5
UZ - Uzbekistan 5
AL - Albania 4
BE - Belgio 4
CI - Costa d'Avorio 4
DK - Danimarca 4
DZ - Algeria 4
JO - Giordania 4
MA - Marocco 4
MD - Moldavia 4
OM - Oman 4
PA - Panama 4
SA - Arabia Saudita 4
CY - Cipro 3
IR - Iran 3
KE - Kenya 3
LT - Lituania 3
NZ - Nuova Zelanda 3
PE - Perù 3
RS - Serbia 3
TN - Tunisia 3
AO - Angola 2
AZ - Azerbaigian 2
BG - Bulgaria 2
BY - Bielorussia 2
CO - Colombia 2
CW - ???statistics.table.value.countryCode.CW??? 2
EG - Egitto 2
GA - Gabon 2
GE - Georgia 2
HN - Honduras 2
HU - Ungheria 2
JM - Giamaica 2
KZ - Kazakistan 2
LU - Lussemburgo 2
NI - Nicaragua 2
PR - Porto Rico 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
SY - Repubblica araba siriana 2
UY - Uruguay 2
XK - ???statistics.table.value.countryCode.XK??? 2
AM - Armenia 1
AU - Australia 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BZ - Belize 1
CD - Congo 1
CG - Congo 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
DM - Dominica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
ET - Etiopia 1
EU - Europa 1
HR - Croazia 1
KG - Kirghizistan 1
LK - Sri Lanka 1
LV - Lettonia 1
ML - Mali 1
NE - Niger 1
Totale 8.487
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Città #
Singapore 816
Hefei 353
Moscow 264
Ashburn 262
Beijing 217
Naples 212
Hong Kong 199
Chandler 185
Santa Clara 158
Amsterdam 118
Los Angeles 113
Ho Chi Minh City 104
Napoli 74
Seoul 73
New York 59
Hanoi 57
Millbury 53
Fairfield 51
Munich 50
Boston 43
Des Moines 43
Buffalo 40
São Paulo 40
Dallas 35
Princeton 34
Redondo Beach 33
Helsinki 31
Montreal 29
Nuremberg 26
The Dalles 25
Tokyo 24
Denver 23
Lawrence 22
Ottawa 22
Seattle 22
Houston 21
Nanjing 21
Mexico City 20
Chennai 19
Orem 19
Rome 19
Milan 18
Turku 18
Warsaw 17
Frankfurt am Main 16
Atlanta 15
Falkenstein 15
Phoenix 15
Poplar 15
Haiphong 14
Johannesburg 14
London 14
Wilmington 14
Brooklyn 13
Chicago 13
Da Nang 13
Puglianello 13
Rio de Janeiro 13
Hebei 12
Toronto 11
Duncan 10
Shanghai 10
Belo Horizonte 9
Castelfranci 9
Giugliano in Campania 9
Marigliano 9
Mumbai 9
Stockholm 9
Bologna 8
Guarulhos 8
Manchester 8
Nanchang 8
Rende 8
Biên Hòa 7
Jiaxing 7
San Francisco 7
Ankara 6
Guayaquil 6
Ninh Bình 6
Shenyang 6
Trieste 6
Turin 6
Vienna 6
Wroclaw 6
Brasília 5
Curitiba 5
Dublin 5
Lodz 5
Pago Veiano 5
Panama City 5
Querétaro 5
Quito 5
Taipei 5
Tampa 5
Tashkent 5
Thái Nguyên 5
Tianjin 5
Toulouse 5
Amman 4
Asunción 4
Totale 4.563
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Nome #
200 V Fast Recovery Epitaxial Diode with superior ESD capability 189
Optimum module design II: Impact of parameter design spread 177
Innovative Photonic Sensors for Safety and Security, Part III: Environment, Agriculture and Soil Monitoring 139
A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs 132
Transmission line pulse system for avalanche characterization of high power semiconductor devicesVLSI Circuits and Systems VI 128
Simulation of an Optical-to-Digital Converter for High Frequency FBG Interrogator 128
3D electro-thermal simulations of wide area power devices operating in avalanche condition 126
Innovative Photonic Sensors for Safety and Security, Part I: Fundamentals, Infrastructural and Ground Transportations 125
Development and optimization of an energy harvesting circuit for multiple piezoelectric elements integrated into a smart air spring 124
Innovative Photonic Sensors for Safety and Security, Part II: Aerospace and Submarine Applications 123
Effect of the Collector Design on the IGBT Avalanche Ruggedness: A Comparative Analysis between Punch-Through and Field-Stop Devices 122
Physics of the Negative Resistance in the Avalanche I-V Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness 121
Effect of Parameters Variability on the Performance of SiC MOSFET Modules 120
Electrothermal aware design of multichip SiC-based converters for e-mobility 120
An ultrafast IR thermography system for transient temperature detection on electronic devices2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) 119
Impact of gate drive voltage on avalanche robustness of trench IGBTs 116
Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module 113
A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs 112
Automatic TCAD model calibration for multi-cellular Trench-IGBTs 112
Real-Time Myocardial Infarction Detection Approaches with a Microcontroller-Based Edge-AI Device 111
Model-order reduction procedure for fast dynamic electrothermal simulation of power converters 111
Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes 111
Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs 110
Gate Driver for p-GaN HEMTs with Real-Time Monitoring Capability of Channel Temperature 108
Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs 108
TCAD Analysis of the Impact of the Metal-Semiconductor Junction Properties on the Forward Characteristics of MPS/JBS SiC Diodes 108
Short-circuit failure mechanism of SiC power MOSFETs 108
Development of a new short-circuit tester for 1.7kV high current power devices 108
Physically based analytical model of the blocking I?V curve of Trench IGBTs 107
A robust and automated parameters calibration procedure for PSpice IGBT models 106
Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs 105
A novel low-cost timing system for alpine ski races based on low power microcontrollers and peer-To-peer wireless data transfer 104
SiC MOSFETs 104
Cell pitch influence on the current distribution during avalanche operation of trench IGBTs: Design issues to increase UIS ruggedness2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) 103
An electro-thermal SPICE model for Reverse Conducting IGBT: Simulation and experimental validation 103
Accurate SPICE modeling of Reverse Conducting IGBTs including self-heating effect 103
SiC/SiO2interface traps effect on SiC MOSFETs Gate capacitance with biased Drain 102
Floating field ring technique applied to enhance fill factor of silicon photomultiplier elementary cell 100
A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design 100
High-temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures 99
ELDO-COMSOL based 3D electro-thermal simulations of power semiconductor devices2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) 98
An efficient simulation methodology to quantify the impact of parameter fluctuations on the electrothermal behavior of multichip SiC power modules 98
Edge-AI on Wearable Devices: Myocardial Infarction Detection with Spectrogram and 1D-CNN 97
TCAD model calibration for the SiC/SiO2interface trap distribution of a planar SiC MOSFET 97
An area-effective termination technique for PT-Trench IGBTs 97
Physics of current limited failures during avalanche for 600V Fast Recovery Diodes 97
SiC MOSFET C-V Curves Analysis with Floating Drain Configuration 97
An Experimentally Verified 3.3 kV SiC MOSFET Model Suitable for High-Current Modules Design 95
Gate current in p-gan gate hemts as a channel temperature sensitive parameter: A comparative study between schottky-and ohmic-gate gan hemts 94
Source modulation technique applied to enhance the Short-Circuit robustness of a PT-IGBT 93
Wide Range AWG-Based FBG Interrogation System With Improved Sensitivity 93
Atrial Fibrillation Detection by Means of Edge Computing on Wearable Device: A Feasibility Assessment 92
A comprehensive study of current conduction during breakdown of Floating Field Ring terminations at arbitrary current levels 91
SiC MOSFETs capacitance study 85
SiC MOSFET C-V Characteristics with Positive Biased Drain 85
Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs 85
Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs 85
An Electrothermal Compact Model for SiC MOSFETs Based on SPICE Primitives with Improved Description of the JFET Resistance 83
On the avalanche ruggedness of optimized termination structure for 600 v punch-through IGBTs 83
Fully-Coupled Electrothermal Simulation of Wide-Area Reverse Conducting IGBTs 83
TCAD-based investigation of a 3.3 kV planar SiC MOSFET: BV-RON trade-off optimization 78
Experimental analysis of electro-thermal interaction in normally-off pGaN HEMT devices 78
Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode 77
Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode 77
Influence of the SiC/SiO2 SiC MOSFET interface traps distribution on C-V measurements evaluated by TCAD simulations 76
A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs 75
Self-sustained turn-off oscillation of SiC MOSFETs: Origin, instability analysis, and prevention 75
Analysis of the Drever-Pound-Hall technique for the simultaneous detection of the detuning of more cavities on a single channel 74
Out-of-SOA performance in 3.3 kV SiC MOSFETs: Comparison between planar and quasi-planar trench 70
Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs 70
A temperature-dependent SPICE model of SiC Power MOSFETs for within and out-of-SOA simulations 69
Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography 66
Statistical Electrothermal Simulation for Lifetime Prediction of Parallel SiC MOSFETs and Modules 65
Threshold Voltage Temperature Dependence for a 1.2 kV SiC MOSFET with Non-Linear Gate Stack 64
Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET 64
Self-sustained Oscillation of Superjunction MOSFET Intrinsic Diode during Reverse Recovery Transient 63
Infrared Thermography applied to power electron devices investigation 62
The Ferro-Power MOSFET: Enhancing Short-Circuit Robustness in Power Switches With a Ferroelectric Gate Stack 61
3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance 61
Numerical Analysis of the Schottky Contact Properties on the Forward Conduction of MPS/JBS SiC Diodes 60
Edge-AI Enabled Wearable Device for Non-Invasive Type 1 Diabetes Detection Using ECG Signals 60
Short-Circuit Rugged 1.2 kV SiC MOSFET with a Non-Linear Dielectric Gate Stack 57
SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation Through Advanced TCAD Simulations 56
Development of an HBM-ESD tester for power semiconductor devices 56
Effects of current filaments during dynamic avalanche on the collector-emitter-voltage of high voltage Trench-IGBTs 56
Substantial Improvement of the Short-circuit Capability of a 1.2 kV SiC MOSFET by a HfO2/SiO2Ferroelectric Gate Stack 47
Short-circuit and Avalanche Robustness of SiC Power MOSFETs for Aerospace Power Converters 46
New method to calibrate the pattern dependency of selective epitaxy of SiGe layers 45
Total Area Current Distribution Analysis during UIS Test for 600 v Power Diode by Lock-In Thermography 45
Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices 44
A Scalable SPICE Electrothermal Compact Model for SiC MOSFETs: A Comparative Study between the LEVEL-3 and the BSIM 41
Kinetic model of SiGe selective epitaxial growth using RPCVD technique 41
Kinetic model of SiGe selective epitaxial growth using RPCVD technique 40
Electro-thermal Simulations of Power Semiconductor Devices during High Stress Events 40
Short circuit robustness analysis of new generation Enhancement-mode p-GaN power HEMTs 39
Temperature dependence of the on-state voltage drop in field-stop IGBTs 34
SiC MOSFETs C-V Capacitance Curves with Negative Biased Drain 16
Evaluation of interface traps type, energy level and density of SiC mosfets by means of C-V curves TCAD simulations 13
SiC MOSFETs Biased C-V Curves: A Temperature Investigation 9
Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain 7
Totale 8.670
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Categoria #
all - tutte 26.538
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 26.538
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202192 0 0 0 0 0 12 14 2 13 6 1 44
2021/2022273 2 0 5 13 2 4 0 12 38 25 37 135
2022/2023622 59 39 19 29 55 54 43 52 83 107 44 38
2023/2024502 19 84 132 52 34 8 13 30 13 21 70 26
2024/20252.799 108 138 18 29 105 157 304 180 144 187 1.048 381
2025/20263.859 614 609 586 744 1.023 283 0 0 0 0 0 0
Totale 8.670