In this paper, SiC MOSFETs capacitance is monitored when a DC bias is applied between Drain and Source. The arising capacitance exhibits a sharp peak in the inversion region which is related to the SiC/SiO2 interface traps properties. Temperature effects on such peak are investigated using both experimental and numerical results. The peak shifts toward lower Gate voltage as temperature increases, in agreement with the threshold voltage reduction at higher temperature.
SiC MOSFETs Biased C-V Curves: A Temperature Investigation / Matacena, I.; Maresca, L.; Riccio, M.; Irace, A.; Breglio, G.; Falberto, A. C.; Daliento, S.. - 1091:(2023), pp. 31-36. ( International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022) [10.4028/p-mqpk26].
SiC MOSFETs Biased C-V Curves: A Temperature Investigation
Matacena I.
Primo
;Maresca L.;Riccio M.;Irace A.;Breglio G.;Daliento S.
2023
Abstract
In this paper, SiC MOSFETs capacitance is monitored when a DC bias is applied between Drain and Source. The arising capacitance exhibits a sharp peak in the inversion region which is related to the SiC/SiO2 interface traps properties. Temperature effects on such peak are investigated using both experimental and numerical results. The peak shifts toward lower Gate voltage as temperature increases, in agreement with the threshold voltage reduction at higher temperature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
