In this paper a physical model for the evaluation of the I–V curve in avalanche condition of the vertical PNP of an IGBT is presented. A two-zone linear approximation for the electric field in the depletion region is adopted and the slope of the two regions is defined from the total current and the ratio between the electrons and holes fluxes. The ratio between the electrons and holes which flow into the depletion region is evaluated by means of an accurate charge control model which provides the β of the PNP up to high injection current levels.
Physically based analytical model of the blocking I?V curve of Trench IGBTs / Maresca, Luca; Romano, Gianpaolo; Breglio, Giovanni; Irace, Andrea. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 53:(2013), pp. 1783-1787. [10.1016/j.microrel.2013.07.060]
Physically based analytical model of the blocking I?V curve of Trench IGBTs
MARESCA, LUCA;ROMANO, GIANPAOLO;BREGLIO, GIOVANNI;IRACE, ANDREA
2013
Abstract
In this paper a physical model for the evaluation of the I–V curve in avalanche condition of the vertical PNP of an IGBT is presented. A two-zone linear approximation for the electric field in the depletion region is adopted and the slope of the two regions is defined from the total current and the ratio between the electrons and holes fluxes. The ratio between the electrons and holes which flow into the depletion region is evaluated by means of an accurate charge control model which provides the β of the PNP up to high injection current levels.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
