In this paper, the impact of the anode contact in SBDs, PiN, JBS and MPS diodes is analyzed through TCAD simulations. The focus of the investigation is the correct simulation of the Schottky barrier height on the different areas of the device to correctly simulate a JBS or MPS structure. It is found that the splitting of the anode contact and an accurate selection of the Schottky barrier height on p-zone is necessary to allow the onset of the bipolar conduction in MPS devices. In this way, it is possible to correctly analyze the behavior of an MPS diode, including the snapback phenomenon.
Numerical Analysis of the Schottky Contact Properties on the Forward Conduction of MPS/JBS SiC Diodes / Boccarossa, Marco; Borghese, Alessandro; Maresca, Luca; Riccio, Michele; Breglio, Giovanni; Irace, Andrea. - 947:(2023), pp. 95-102. [10.4028/p-mlkxy8]
Numerical Analysis of the Schottky Contact Properties on the Forward Conduction of MPS/JBS SiC Diodes
Boccarossa Marco;Borghese Alessandro;Maresca Luca;Riccio Michele;Breglio Giovanni;Irace Andrea
2023
Abstract
In this paper, the impact of the anode contact in SBDs, PiN, JBS and MPS diodes is analyzed through TCAD simulations. The focus of the investigation is the correct simulation of the Schottky barrier height on the different areas of the device to correctly simulate a JBS or MPS structure. It is found that the splitting of the anode contact and an accurate selection of the Schottky barrier height on p-zone is necessary to allow the onset of the bipolar conduction in MPS devices. In this way, it is possible to correctly analyze the behavior of an MPS diode, including the snapback phenomenon.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
