Recently, the human body model - electrostatic discharge (HBM-ESD) test capability for power diodes was introduced among the requirements in the field of automotive include for a superior reliability. During the HBM-ESD test, the DUT works in avalanche conditions and it is still not well understood the failure modality occurring in power diodes. The available commercial HBM-ESD testers only give information about the maximum voltage rate, without any specific measurement of electrical waveforms. In this work we present a HBM - ESD tester for the characterization of power semiconductor devices up to 6 kV. In the proposed tester both the voltage and current DUT waveforms are measured, for a further gain of the failure analysis in power diodes.

Development of an HBM-ESD tester for power semiconductor devices / Maresca, L.; Auriemma, G.; Boccarossa, M.; Borghese, A.; Riccio, M.; Breglio, G.; Irace, A.. - (2021), pp. 124-127. (Intervento presentato al convegno 15th International Seminar On Power Semiconductors, 2021 tenutosi a Prague, Czech Republic nel 2021) [10.14311/isps.2021.019].

Development of an HBM-ESD tester for power semiconductor devices

Maresca, L.
;
Auriemma, G.;Boccarossa, M.;Borghese, A.;Riccio, M.;Breglio, G.;Irace, A.
2021

Abstract

Recently, the human body model - electrostatic discharge (HBM-ESD) test capability for power diodes was introduced among the requirements in the field of automotive include for a superior reliability. During the HBM-ESD test, the DUT works in avalanche conditions and it is still not well understood the failure modality occurring in power diodes. The available commercial HBM-ESD testers only give information about the maximum voltage rate, without any specific measurement of electrical waveforms. In this work we present a HBM - ESD tester for the characterization of power semiconductor devices up to 6 kV. In the proposed tester both the voltage and current DUT waveforms are measured, for a further gain of the failure analysis in power diodes.
2021
978-80-01-06874-8
Development of an HBM-ESD tester for power semiconductor devices / Maresca, L.; Auriemma, G.; Boccarossa, M.; Borghese, A.; Riccio, M.; Breglio, G.; Irace, A.. - (2021), pp. 124-127. (Intervento presentato al convegno 15th International Seminar On Power Semiconductors, 2021 tenutosi a Prague, Czech Republic nel 2021) [10.14311/isps.2021.019].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/1005094
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