This paper presents a compact model implemented in SPICE environment for silicon carbide (SiC) MOSFET. The model is easily adjustable to devices belonging to different voltage and current ratings. A previous release of the model was tuned to match the performance of 1.2 kV and 3.3 kV SiC MOSFETs, while, in this contribution, an improved version of the compact model is calibrated for 1.7 kV devices. The agreement between the experimental and simulated data, achieved for both static and dynamic conditions, associated to the model simulation speed, emphasize its suitability as a tool for the simulation of converter containing wide arrangements of devices.
A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs / Borghese, A.; Riccio, M.; Maresca, L.; Breglio, G.; Kicin, S.; Irace, A.. - 1062:(2022), pp. 658-662. (Intervento presentato al convegno 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 nel 2021) [10.4028/p-278mb0].
A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs
Borghese A.;Riccio M.;Maresca L.;Breglio G.;Irace A.
2022
Abstract
This paper presents a compact model implemented in SPICE environment for silicon carbide (SiC) MOSFET. The model is easily adjustable to devices belonging to different voltage and current ratings. A previous release of the model was tuned to match the performance of 1.2 kV and 3.3 kV SiC MOSFETs, while, in this contribution, an improved version of the compact model is calibrated for 1.7 kV devices. The agreement between the experimental and simulated data, achieved for both static and dynamic conditions, associated to the model simulation speed, emphasize its suitability as a tool for the simulation of converter containing wide arrangements of devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
