SiC MOSFETs are promising devices for many power applications. They are replacing Si devices due to the higher performance of SiC material. However, there are some technological issues still unsolved. One of the main problems is the high density of traps at the SiC/SiO2 interface. Traps distribution at such interface is complex and it affects the overall performance of the device. Traps influence both current-voltage and capacitance-voltage characteristics of a SiC MOSFET. The aim of this work is the study of interface traps effects on C-V and I-V curves for a 1200 V SiC MOSFET. The numerical study is adopted to explain the shape of experimental C-V curves of commercial devices.
Evaluation of interface traps type, energy level and density of SiC mosfets by means of C-V curves TCAD simulations / Matacena, I.; Maresca, L.; Riccio, M.; Irace, A.; Breglio, G.; Daliento, S.. - 1004:(2020), pp. 608-613. ( 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 jpn 2019) [10.4028/www.scientific.net/MSF.1004.608].
Evaluation of interface traps type, energy level and density of SiC mosfets by means of C-V curves TCAD simulations
Matacena I.;Maresca L.;Riccio M.;Irace A.;Breglio G.;Daliento S.
2020
Abstract
SiC MOSFETs are promising devices for many power applications. They are replacing Si devices due to the higher performance of SiC material. However, there are some technological issues still unsolved. One of the main problems is the high density of traps at the SiC/SiO2 interface. Traps distribution at such interface is complex and it affects the overall performance of the device. Traps influence both current-voltage and capacitance-voltage characteristics of a SiC MOSFET. The aim of this work is the study of interface traps effects on C-V and I-V curves for a 1200 V SiC MOSFET. The numerical study is adopted to explain the shape of experimental C-V curves of commercial devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
