In this paper the effects of SiC/SiO2 interface traps on SiC MOSFETs Gate Capacitance are investigated when a positive bias is applied at the Drain terminal. The Gate capacitance arising from this configuration shows an unexpected sharp peak, exceeding the oxide capacitance, for a Gate voltage close to the threshold voltage. The properties of such peak are studied through numerical analysis. Results affirm that the peak is related to the displacement current, and its origin lies in the channel region. The so-measured Gate capacitance can allow the extraction of important interface properties, such as traps concentration at the SiC/SiO2 interface. Also the effects of temperature on this peak are investigated through experimental and numerical analysis
SiC/SiO2interface traps effect on SiC MOSFETs Gate capacitance with biased Drain / Matacena, I.; Maresca, L.; Riccio, M.; Irace, A.; Breglio, G.; Castellazzi, A.; Daliento, S.. - 2022-:(2022), pp. 1-5. (Intervento presentato al convegno 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022 tenutosi a sgp nel 2022) [10.1109/IPFA55383.2022.9915748].
SiC/SiO2interface traps effect on SiC MOSFETs Gate capacitance with biased Drain
Matacena I.;Maresca L.;Riccio M.;Irace A.;Breglio G.;Daliento S.
2022
Abstract
In this paper the effects of SiC/SiO2 interface traps on SiC MOSFETs Gate Capacitance are investigated when a positive bias is applied at the Drain terminal. The Gate capacitance arising from this configuration shows an unexpected sharp peak, exceeding the oxide capacitance, for a Gate voltage close to the threshold voltage. The properties of such peak are studied through numerical analysis. Results affirm that the peak is related to the displacement current, and its origin lies in the channel region. The so-measured Gate capacitance can allow the extraction of important interface properties, such as traps concentration at the SiC/SiO2 interface. Also the effects of temperature on this peak are investigated through experimental and numerical analysisI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
