Multidimensional device structures can improve the typical performance trade-off of semiconductor power transistors. In this paper, the on-state, reverse, and short-circuit performance of a SiC quasi-planar trench MOSFET are compared to those of a classical planar device through advanced 3-D TCAD simulations.
Out-of-SOA performance in 3.3 kV SiC MOSFETs: Comparison between planar and quasi-planar trench / Scognamillo, Ciro; Borghese, Alessandro; Melnyk, Kyrylo; Nistor, Iulian; D’Alessandro, Vincenzo; Boccarossa, Marco; Terracciano, Vincenzo; Riccio, Michele; Catalano, Antonio Pio; Breglio, Giovanni; Lophitis, Neo; Antoniou, Marina; Rahimo, Munaf; Irace, Andrea; Maresca, Luca. - 1263:(2025), pp. 369-374. [10.1007/978-3-031-71518-1_44]
Out-of-SOA performance in 3.3 kV SiC MOSFETs: Comparison between planar and quasi-planar trench
Ciro Scognamillo;Alessandro Borghese
Writing – Original Draft Preparation
;Vincenzo d’Alessandro;Marco Boccarossa;Vincenzo Terracciano;Michele Riccio;Antonio Pio Catalano;Giovanni Breglio;Andrea Irace;Luca Maresca
2025
Abstract
Multidimensional device structures can improve the typical performance trade-off of semiconductor power transistors. In this paper, the on-state, reverse, and short-circuit performance of a SiC quasi-planar trench MOSFET are compared to those of a classical planar device through advanced 3-D TCAD simulations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
