Multidimensional device structures can improve the typical performance trade-off of semiconductor power transistors. In this paper, the on-state, reverse, and short-circuit performance of a SiC quasi-planar trench MOSFET are compared to those of a classical planar device through advanced 3-D TCAD simulations.
Out-of-SOA performance in 3.3 kV SiC MOSFETs: Comparison between planar and quasi-planar trench / Scognamillo, C., Borghese, A., Melnyk, K., Nistor, I., D’Alessandro, V., Boccarossa, M., Terracciano, V., Riccio, M., Catalano, A.P., Breglio, G., Lophitis, N., Antoniou, M., Rahimo, M., Irace, A., Maresca, L.. - 1263:(2025), pp. 369-374. [10.1007/978-3-031-71518-1_44]
Out-of-SOA performance in 3.3 kV SiC MOSFETs: Comparison between planar and quasi-planar trench
Ciro Scognamillo;Alessandro Borghese
Writing – Original Draft Preparation
;Vincenzo d’Alessandro;Marco Boccarossa;Vincenzo Terracciano;Michele Riccio;Antonio Pio Catalano;Giovanni Breglio;Andrea Irace;Luca Maresca
2025
Abstract
Multidimensional device structures can improve the typical performance trade-off of semiconductor power transistors. In this paper, the on-state, reverse, and short-circuit performance of a SiC quasi-planar trench MOSFET are compared to those of a classical planar device through advanced 3-D TCAD simulations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
