SiC MOSFETs still suffers from some open issues, such as the high density of defects existing at the SiC/ SiO2 interface. In order to characterize such interface, a non-destructive investigation technique should be employed. In this work, we investigate the measurement of Gate capacitance with biased Drain. More in detail, the effect of frequency on such curves is considered. The analysis is performed using both in experimental setup and numerical framework. Experimental and numerical results both exhibit a sharp capacitance peak in the inversion region which reduces its height as frequency increases.
Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain / Matacena, I.; Maresca, L.; Riccio, M.; Irace, A.; Breglio, G.; Daliento, S.. - In: DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA. - ISSN 1012-0394. - 360:(2024), pp. 145-149. ( International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023) [10.4028/p-O37qXb].
Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
Matacena I.
Primo
;Maresca L.;Riccio M.;Irace A.;Breglio G.;Daliento S.
2024
Abstract
SiC MOSFETs still suffers from some open issues, such as the high density of defects existing at the SiC/ SiO2 interface. In order to characterize such interface, a non-destructive investigation technique should be employed. In this work, we investigate the measurement of Gate capacitance with biased Drain. More in detail, the effect of frequency on such curves is considered. The analysis is performed using both in experimental setup and numerical framework. Experimental and numerical results both exhibit a sharp capacitance peak in the inversion region which reduces its height as frequency increases.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
