SiC MOSFETs have already replaced silicon-based device in power applications, even if some technological issues are still not solved. Among others, the complex traps distribution at SiC/SiO2 interface is of foremost importance. Interface traps affect the overall device behavior, modifying channel mobility and introducing hysteresis. In this work, the capacitance behavior, when the Drain terminal is floating, is studied through numerical analysis. The effects of traps distribution and its properties on such curves has been studied along with temperature effects. Experimental curves are carried out at various temperatures and compared to the same trends of numerical results.
SiC MOSFET C-V Curves Analysis with Floating Drain Configuration / Matacena, I.; Maresca, L.; Riccio, M.; Irace, A.; Breglio, G.; Daliento, S.. - 1062:(2022), pp. 663-668. (Intervento presentato al convegno 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 nel 2021) [10.4028/p-96q66n].
SiC MOSFET C-V Curves Analysis with Floating Drain Configuration
Matacena I.;Maresca L.;Riccio M.;Irace A.;Breglio G.;Daliento S.
2022
Abstract
SiC MOSFETs have already replaced silicon-based device in power applications, even if some technological issues are still not solved. Among others, the complex traps distribution at SiC/SiO2 interface is of foremost importance. Interface traps affect the overall device behavior, modifying channel mobility and introducing hysteresis. In this work, the capacitance behavior, when the Drain terminal is floating, is studied through numerical analysis. The effects of traps distribution and its properties on such curves has been studied along with temperature effects. Experimental curves are carried out at various temperatures and compared to the same trends of numerical results.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
