In this paper, TCAD simulations provide insights on the effect of a non-linear dielectric gate stack on the short-circuit performance of silicon carbide (SiC) power MOSFETs. In particular, the regular gate oxide was replaced by a stack formed by silicon dioxide and a non-linear dielectric whose permittivity varies with temperature, in order to counterbalance the reduction of the threshold voltage due to temperature. Simulations show that the presented device has a higher ruggedness to short-circuit events, thanks to the reduction of the maximum temperature arising in the device during those events.
Short-Circuit Rugged 1.2 kV SiC MOSFET with a Non-Linear Dielectric Gate Stack / Boccarossa, M.; Maresca, L.; Borghese, A.; Riccio, M.; Breglio, G.; Irace, A.; Salvatore, G. A.. - 2023-May:(2023), pp. 354-357. ( 35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023 Hong Kong 2023) [10.1109/ISPSD57135.2023.10147604].
Short-Circuit Rugged 1.2 kV SiC MOSFET with a Non-Linear Dielectric Gate Stack
Boccarossa, M.
;Maresca, L.;Borghese, A.;Riccio, M.;Breglio, G.;Irace, A.;Salvatore, G. A.
2023
Abstract
In this paper, TCAD simulations provide insights on the effect of a non-linear dielectric gate stack on the short-circuit performance of silicon carbide (SiC) power MOSFETs. In particular, the regular gate oxide was replaced by a stack formed by silicon dioxide and a non-linear dielectric whose permittivity varies with temperature, in order to counterbalance the reduction of the threshold voltage due to temperature. Simulations show that the presented device has a higher ruggedness to short-circuit events, thanks to the reduction of the maximum temperature arising in the device during those events.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
