In this paper the effect of different types of anode contacts is analyzed through TCAD simulations for Schottky, PiN and MPS/JBS diodes. Several case-studies are investigated and it is found that an accurate selection of the Schottky barrier height is necessary to allow the onset of the bipolar conduction in MPS devices. Moreover, tuning the Schottky barrier height allows to achieve different levels of conductivity modulation when the PiN region is forward biased.
TCAD Analysis of the Impact of the Metal-Semiconductor Junction Properties on the Forward Characteristics of MPS/JBS SiC Diodes / Boccarossa, M.; Borghese, A.; Maresca, L.; Riccio, M.; Breglio, G.; Irace, A.. - (2022), pp. 1-5. (Intervento presentato al convegno 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022 tenutosi a gbr nel 2022) [10.1109/WiPDAEurope55971.2022.9936079].
TCAD Analysis of the Impact of the Metal-Semiconductor Junction Properties on the Forward Characteristics of MPS/JBS SiC Diodes
Boccarossa M.;Borghese A.;Maresca L.;Riccio M.;Breglio G.;Irace A.
2022
Abstract
In this paper the effect of different types of anode contacts is analyzed through TCAD simulations for Schottky, PiN and MPS/JBS diodes. Several case-studies are investigated and it is found that an accurate selection of the Schottky barrier height is necessary to allow the onset of the bipolar conduction in MPS devices. Moreover, tuning the Schottky barrier height allows to achieve different levels of conductivity modulation when the PiN region is forward biased.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
