Silicon carbide (SiC) based power devices are highly competitive and widely used, especially in the electric vehicle (EV) market. Beyond the 'conventional' 650-1700 V blocking voltage space for EV applications, high-voltage ( > 3 kV), high-current (> 100 A) devices have raised commercial interest for traction and PV applications. The fundamental advantages of the Superjunction (SJ) concept are of particular interest to help reduce the drift region resistance. The proposed 3.3 kV semi-SJ Schottky diode reduces the RON, SPby 9.7 %, compared to a planar diode solution. Additionally, with the introduction of a novel etched termination (ET) combined with junction termination extension (JTE) and floating field rings (FFR) blocking is improved by 6 %.
Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices / Melnyk, Kyrylo; Renz, Arne Benjamin; Cao, Qinze; Gammon, Peter Michael; Shah, Vishal Ajit; Lophitis, Neophytos; Rahimo, Munaf; Nistor, Iulian; Scognamillo, Ciro; Borghese, Alessandro; Maresca, Luca; Irace, Andrea; Antoniou, Marina. - (2024), pp. 132-135. ( 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 Bremen, Germany 2024) [10.1109/ispsd59661.2024.10579567].
Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices
Scognamillo, Ciro;Borghese, Alessandro;Maresca, Luca;Irace, Andrea;
2024
Abstract
Silicon carbide (SiC) based power devices are highly competitive and widely used, especially in the electric vehicle (EV) market. Beyond the 'conventional' 650-1700 V blocking voltage space for EV applications, high-voltage ( > 3 kV), high-current (> 100 A) devices have raised commercial interest for traction and PV applications. The fundamental advantages of the Superjunction (SJ) concept are of particular interest to help reduce the drift region resistance. The proposed 3.3 kV semi-SJ Schottky diode reduces the RON, SPby 9.7 %, compared to a planar diode solution. Additionally, with the introduction of a novel etched termination (ET) combined with junction termination extension (JTE) and floating field rings (FFR) blocking is improved by 6 %.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
