IRIS
RINALDI, NICCOLO'
 Distribuzione geografica
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Continente #
AS - Asia 3.924
NA - Nord America 3.872
EU - Europa 3.493
SA - Sud America 603
AF - Africa 72
Continente sconosciuto - Info sul continente non disponibili 8
OC - Oceania 2
Totale 11.974
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Nazione #
US - Stati Uniti d'America 3.735
SG - Singapore 2.312
RU - Federazione Russa 1.758
CN - Cina 749
BR - Brasile 499
HK - Hong Kong 403
IT - Italia 305
UA - Ucraina 305
DE - Germania 279
VN - Vietnam 243
IE - Irlanda 219
FI - Finlandia 192
NL - Olanda 156
CA - Canada 79
SE - Svezia 79
GB - Regno Unito 78
IN - India 50
MX - Messico 43
AR - Argentina 41
FR - Francia 36
JP - Giappone 33
BD - Bangladesh 22
PL - Polonia 19
TR - Turchia 16
ZA - Sudafrica 16
IQ - Iraq 14
VE - Venezuela 14
EC - Ecuador 13
ES - Italia 13
ID - Indonesia 12
PE - Perù 12
MA - Marocco 11
CH - Svizzera 10
CZ - Repubblica Ceca 9
TW - Taiwan 9
CO - Colombia 7
PY - Paraguay 7
UZ - Uzbekistan 7
AT - Austria 6
EU - Europa 6
LT - Lituania 6
PK - Pakistan 6
KE - Kenya 5
UY - Uruguay 5
BE - Belgio 4
CY - Cipro 4
KR - Corea 4
KZ - Kazakistan 4
NP - Nepal 4
SA - Arabia Saudita 4
BO - Bolivia 3
CI - Costa d'Avorio 3
DO - Repubblica Dominicana 3
GE - Georgia 3
HR - Croazia 3
JM - Giamaica 3
LB - Libano 3
TN - Tunisia 3
TZ - Tanzania 3
AL - Albania 2
AO - Angola 2
AZ - Azerbaigian 2
BB - Barbados 2
CG - Congo 2
CL - Cile 2
CM - Camerun 2
DK - Danimarca 2
DZ - Algeria 2
KG - Kirghizistan 2
KW - Kuwait 2
LV - Lettonia 2
ML - Mali 2
MZ - Mozambico 2
NG - Nigeria 2
PS - Palestinian Territory 2
RS - Serbia 2
SK - Slovacchia (Repubblica Slovacca) 2
ZM - Zambia 2
AE - Emirati Arabi Uniti 1
AF - Afghanistan, Repubblica islamica di 1
AU - Australia 1
BG - Bulgaria 1
BH - Bahrain 1
BJ - Benin 1
BN - Brunei Darussalam 1
BW - Botswana 1
BY - Bielorussia 1
CU - Cuba 1
CV - Capo Verde 1
CW - ???statistics.table.value.countryCode.CW??? 1
DJ - Gibuti 1
EG - Egitto 1
ET - Etiopia 1
GH - Ghana 1
GM - Gambi 1
GT - Guatemala 1
HN - Honduras 1
HT - Haiti 1
IL - Israele 1
IR - Iran 1
Totale 11.950
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Città #
Singapore 1.001
Chandler 463
Moscow 447
Hong Kong 402
Ashburn 294
Jacksonville 274
Beijing 267
Santa Clara 241
Princeton 172
Millbury 169
Amsterdam 144
Boston 126
Woodbridge 121
Nanjing 115
Ho Chi Minh City 95
Los Angeles 95
Wilmington 77
Buffalo 69
Munich 58
Hanoi 57
The Dalles 56
Ottawa 54
Napoli 53
Des Moines 44
New York 43
Ann Arbor 42
São Paulo 42
Houston 40
Redondo Beach 38
Hebei 34
Kronberg 29
Dallas 27
Nanchang 26
Shenyang 26
Norwalk 25
Jiaxing 22
Tokyo 22
Rio de Janeiro 21
Chicago 20
Mexico City 20
Pune 20
Seattle 20
Turku 20
Naples 19
Cagliari 18
Redwood City 18
Boardman 16
Frankfurt am Main 16
Tianjin 16
Belo Horizonte 15
Helsinki 15
Milan 15
Washington 15
Brooklyn 14
Changsha 14
London 14
Stockholm 14
Shanghai 12
Chennai 11
Duncan 11
Falls Church 11
Hefei 11
Warsaw 11
Atlanta 10
Brasília 10
Dublin 10
Fidenza 10
Haiphong 10
Kunming 10
Orem 10
San Francisco 10
Da Nang 9
Johannesburg 9
Leawood 9
Orange 9
Zurich 9
Campinas 8
Falkenstein 8
Guangzhou 8
Montreal 8
Rome 8
Sunnyvale 8
Toronto 8
Cologne 7
Dhaka 7
Lima 7
Nürnberg 7
Poplar 7
Porto Alegre 7
Bexley 6
Denver 6
Guayaquil 6
Mountain View 6
Ninh Bình 6
Avellino 5
Boydton 5
Curitiba 5
Fairfield 5
Goiânia 5
Manchester 5
Totale 6.000
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Nome #
Numerical analysis of the dynamic thermal behavior of RF bipolar transistors 183
SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs 134
A SCALABLE PHYSICAL MODEL FOR COPLANAR WAVEGUIDE TRANSITION IN FLIP-CHIP APPLICATIONS 131
FAst Novel Thermal Analysis Simulation Tool for Integrated Circuits (FANTASTIC) 121
Thermally induced current bifurcation in bipolar transistors 119
Modellistica analitica e analisi numerica del comportamento termico di transistori bipolari con isolamento a trincea 118
Studio del fenomeno dell'innesco di instabilita' termiche in MOSFET di potenza per basse tensioni: modellistica analitica e verifica sperimentale 117
Effect of heat sources modeling in DC circuit-level electrothermal simulation of power MOSFETs 117
Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors for THz applications 115
Effective electrothermal analysis of electronic devices and systems with parameterized macromodeling 113
Model-order reduction procedure for fast dynamic electrothermal simulation of power converters 110
An experimental power-lines model for digital ASICs based on transmission-lines 109
DESIGN AND CHARACTERIZATION OF A HIGH-RESISTIVITY SILICON TRAVELING WAVE AMPLIFIER FOR 10 GB/S OPTICAL COMMUNICATION SYSTEMS 108
Analisi degli effetti di auto-riscaldamento in transistori bipolari SOA 108
Thermal feedback blocks for fast and reliable electrothermal circuit simulation of power circuits at module level 107
Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies 107
ANALYTICAL SOLUTIONS OF THE DIFFUSIVE HEAT EQUATION AS THE APPLICATION FOR MULTI-CELLULAR DEVICE MODELING - A NUMERICAL ASPECT 106
Fast nonlinear dynamic compact thermal modeling with multiple heat sources in Ultra-Thin Chip Stacking Technology 105
Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations 103
Compact dynamic modeling for fast simulation of nonlinear heat conduction in ultra-thin chip stacking technology 103
Experimental DC extraction of the base resistance of bipolar transistors: Application to SiGe:C HBTs 103
Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors on SOI substrates 102
Matrix reduction tool for creating boundary condition independent dynamic compact thermal models 102
A Two-Dimensional Analytical Model of Homojunction GaAs BMFET Structures 99
Modellistica analitica e analisi numerica del comportamento termico di dispositivi trench SOI 99
Connecting MOR-based boundary condition independent compact thermal models 98
Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs 97
Dynamic electrothermal analysis of bipolar devices and circuits relying on multi-port positive fraction Foster representation 96
Advanced thermal resistance simulation of SiGe HBTs including backend cooling effect 96
Influence of layout and technology parameters on the thermal behavior of InGaP/GaAs HBTs 96
Small-signal operation of semiconductor devices including self-heating, with application to thermal characterization and instability analysis 95
Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation 95
Thermal feedback networks for dynamic electrothermal simulations of devices and circuits: A critical perspective 95
Modeling of minority-carrier transport in semiconductor regions with position-dependent material parameters at arbitrary injection levels 94
Thermal effects in thin silicon dies: simulation and modeling 94
Electrothermal behavior of highly-symmetric three-finger bipolar transistors 93
Thermal mapping and 3D numerical simulation of new cellular power MOS affected by electro-thermal instability 92
Numerical analysis of the thermal behavior sensitivity to technology parameters and operating conditions in InGaP/GaAs HBTs 91
SILICON AS SMART PACKAGE FOR PHOTONIC ICS 90
Modeling of minority-carrier transport in nonuniformly doped silicon regions with asymptotic expansions 90
Thermal design of fully-isolated bipolar transistors 90
Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs 90
Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit 90
Advanced thermal simulation of SiGe:C HBTs including back-end-of-line 89
Structure preserving approach to parametric dynamic compact thermal models of nonlinear heat conduction 88
Theory of electrothermal behavior of bipolar transistors: Part II - Two-finger devices 86
Impact of layout and technology parameters on the thermal resistance of SiGe:C HBTs 86
Dynamic electrothermal macromodeling: An application to signal integrity analysis in highly integrated electronic systems 86
Reliability 86
Analytical model for thermal instability of low voltage power MOS and S.O.A. in pulse operation 85
Thermal analysis of solid-state devices and circuits: an analytical approach 84
Finite element modeling for thermal resistance extraction in silicon-on-glass bipolar transistors 84
Calibration of detailed thermal models by parametric dynamic compact thermal models 84
Dynamic Electrothermal macromodeling techniques for thermal-aware design of circuits and systems 84
The EU DOTSEVEN project: Overview and results 83
Analysis of the influence of layout and technology parameters on the thermal impedance of GaAs HBT/BiFET using a highly-efficient tool 83
On the modeling of the transient thermal behavior of semiconductor devices 82
A microcontroller-based pulse generator for isothermal I-V measurements 82
Influence of scaling and emitter layout on the thermal behavior of toward-THz SiGe:C HBTs 82
Parametric compact thermal models by moment matching for variable geometry 82
Multi-port dynamic compact thermal models of nonlinear heat conduction 82
Novel MOR approach for extracting dynamic compact thermal models with massive numbers of heat sources 82
Delphi-like dynamical compact thermal models using model order reduction 82
Advances in electrothermal simulation of solid-state devices and circuits using commercial CAD tools 81
Generalized image method with application to the thermal modeling of power devices and circuits 81
Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update 81
Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs 81
Novel partition-based approach to dynamic compact thermal modeling 81
Parameterized thermal macromodeling for fast and effective design of electronic components and systems 80
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's 79
A new SPICE model of VDMOS transistors including thermal and quasi-saturation effects 78
Impact of aluminum nitride heatspreaders on the thermal impedance of silicon-on-glass BJTs 77
Analytical Models of Effective Dos, Saturation Velocity and High-Field Mobility for SiGe HBTs Numerical Simulation 77
Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications 77
Analysis of the thermal behavior of AlGaN/GaN HEMTs 77
Theory of electrothermal behavior of bipolar transistors: Part III - Impact-ionization 76
Restabilizing mechanisms after the onset of thermal instability in bipolar transistors 76
Theory of electrothermal behavior of bipolar transistors: Part I - Single-finger devices 76
Electrothermal reduced equivalents of highly integrated electronic systems with multi-port positive fraction Foster expansion 76
Thermal transient behavior of silicon-on-glass BJTs 75
Influence of vertical scaling and temperature on impact-ionization effects in SiGe HBTs 75
Analysis of electrothermal effects in bipolar current mirrors 74
Analysis of the thermal behavior of AlGaN/GaN HEMTs 74
An Improved Write Driver for Miniaturized Hard Disk Drives 73
A new electro-thermal simulation tool for the analysis of bipolar devices and circuits 73
Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors 73
Enhancing commercial CAD tools toward the electrothermal simulation of power transistors 72
Modeling of small-signal minority-carrier transport in bipolar at arbitrary injection levels 71
Influence of concurrent electrothermal and avalanche effects on the safe operating area of multifinger bipolar transistors 71
Theoretical analysis and modeling of bipolar transistor operation under reversal base current conditions 71
Impact of scaling on the DC/RF thermal behavior of Terahertz SiGe HBTs 71
Evaluation and modeling of voltage stress-induced hot carrier effects in high-speed SiGe HBTs 71
Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors 70
Time domain dynamic electrothermal macromodeling for thermally aware integrated system design 69
Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors 68
A back-wafer contacted silicon-on-glass integrated bipolar process - Part II: A novel analysis of thermal breakdown 68
Thermal mapping of new cellular power MOS affected by electro-thermal instability 67
Multi-port dynamic compact thermal models of dual-chip package using model order reduction and metaheuristic optimization 67
Analysis of the depletion layer of exponentially graded pn junctions with nonuniformly doped substrates 66
Achieving accuracy in device and circuit electro-thermal simulation 65
Totale 8.941
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Categoria #
all - tutte 42.809
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 42.809
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021341 0 0 0 0 0 79 68 32 81 14 55 12
2021/2022921 17 3 3 14 5 29 19 40 227 39 116 409
2022/20231.056 188 74 14 110 134 118 3 90 137 137 38 13
2023/2024698 26 115 49 67 48 95 5 88 7 14 133 51
2024/20253.782 247 231 23 19 177 97 458 234 240 267 1.414 375
2025/20263.641 715 464 612 525 1.179 146 0 0 0 0 0 0
Totale 12.432