This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed.
Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors for THz applications / Chevalier, P., Schroeter, M., Bolognesi, C.R., D'Alessandro, V., Alexandrova, M., Boeck, J., Fluckinger, R., Frégonèse, S., Heinemann, B., Jungemann, C., Lovblom, R., Maneux, C., Ostinelli, O., Pawlak, A., Rinaldi, N., Rucker, H., Wedel, G., Zimmer, T.. - In: PROCEEDINGS OF THE IEEE. - ISSN 0018-9219. - 105:6(2017), pp. 1035-1050. [10.1109/JPROC.2017.2669087]
Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors for THz applications
Vincenzo d'Alessandro;Niccolo' Rinaldi;
2017
Abstract
This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed.| File | Dimensione | Formato | |
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