This paper presents an extensive numerical analysis of the thermal behavior of InGaP/GaAs HBTs for handset applications in a laminate (package) environment. Bothwire-bonding and flip-chip technologies are examined. The combination between an accurate, yet fast, simulation capability and the Design of Experiments technique is employed to quantify the impact of all the key technology parameters and explore a wide range of operating conditions.
Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies / D'Alessandro, Vincenzo; Catalano, ANTONIO PIO; Magnani, Alessandro; Codecasa, Lorenzo; Rinaldi, Niccolo'; Moser, Brian; Zampardi, Peter J.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 78:(2017), pp. 233-242. [10.1016/j.microrel.2017.09.011]
Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies
Vincenzo d'Alessandro;Antonio Pio Catalano;Alessandro Magnani;Lorenzo Codecasa;Niccolo' Rinaldi;
2017
Abstract
This paper presents an extensive numerical analysis of the thermal behavior of InGaP/GaAs HBTs for handset applications in a laminate (package) environment. Bothwire-bonding and flip-chip technologies are examined. The combination between an accurate, yet fast, simulation capability and the Design of Experiments technique is employed to quantify the impact of all the key technology parameters and explore a wide range of operating conditions.| File | Dimensione | Formato | |
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