A two-dimensional theoretical analysis of bipolar transistor operation under reversal base current conditions is presented. This model describes the current crowding effect occurring when the device is biased above the open-base breakdown voltage BVCEO, also known as the “pinch-in” effect. In addition, the model clarifies, for the first time, the physical origin of instability phenomena occurring under common-base operating conditions. Closed form analytical relations are derived for the conditions which define the onset of instability under forced-VBE and forced-IE conditions. Finally, we present a simple analytical model for the base current- and geometry-dependence of the base resistance. This model is suitable for being incorporated into BJT compact models to properly describe device operation above BVCEO.

Theoretical analysis and modeling of bipolar transistor operation under reversal base current conditions

RINALDI, NICCOLO'
2009

Abstract

A two-dimensional theoretical analysis of bipolar transistor operation under reversal base current conditions is presented. This model describes the current crowding effect occurring when the device is biased above the open-base breakdown voltage BVCEO, also known as the “pinch-in” effect. In addition, the model clarifies, for the first time, the physical origin of instability phenomena occurring under common-base operating conditions. Closed form analytical relations are derived for the conditions which define the onset of instability under forced-VBE and forced-IE conditions. Finally, we present a simple analytical model for the base current- and geometry-dependence of the base resistance. This model is suitable for being incorporated into BJT compact models to properly describe device operation above BVCEO.
9781424448944
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/358368
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