SPIRITO, PAOLO
 Distribuzione geografica
Continente #
NA - Nord America 1.563
EU - Europa 936
AS - Asia 144
AF - Africa 20
Continente sconosciuto - Info sul continente non disponibili 1
Totale 2.664
Nazione #
US - Stati Uniti d'America 1.543
UA - Ucraina 288
IT - Italia 185
CN - Cina 131
DE - Germania 122
FI - Finlandia 78
SE - Svezia 73
NL - Olanda 67
IE - Irlanda 64
GB - Regno Unito 30
CA - Canada 20
CI - Costa d'Avorio 20
FR - Francia 10
IN - India 8
AT - Austria 5
RU - Federazione Russa 5
CH - Svizzera 4
CZ - Repubblica Ceca 1
EU - Europa 1
HR - Croazia 1
JP - Giappone 1
KR - Corea 1
MD - Moldavia 1
RO - Romania 1
SG - Singapore 1
SI - Slovenia 1
TR - Turchia 1
TW - Taiwan 1
Totale 2.664
Città #
Chandler 365
Jacksonville 279
Millbury 73
Princeton 73
Ashburn 72
Amsterdam 66
Woodbridge 57
Boston 49
Wilmington 49
Nanjing 37
Kronberg 35
Naples 35
Ann Arbor 31
Houston 26
Beijing 25
Napoli 22
Ottawa 19
Norwalk 18
Boardman 17
Nanchang 14
Changsha 9
Des Moines 8
Hebei 8
Pune 8
Shenyang 8
Jiaxing 7
Orange 7
Seattle 7
Shanghai 7
Cagliari 6
Nuremberg 6
Washington 6
Fremont 5
Chicago 4
Dearborn 4
Duncan 4
Kunming 4
Lawrence 4
Marseille 4
Paris 4
Puglianello 4
Scafati 4
Caserta 3
Castelnuovo Rangone 3
Dublin 3
Falls Church 3
Guangzhou 3
Guildford 3
Redwood City 3
Yellow Springs 3
Angri 2
Aversa 2
Baden 2
Bari 2
Cesena 2
Cornate d'Adda 2
Indiana 2
Los Angeles 2
Milan 2
Redmond 2
San Vitaliano 2
Shenzhen 2
Tianjin 2
Vico Equense 2
Villach 2
Walnut 2
Augusta 1
Castiglione Delle Stiviere 1
Chisinau 1
Cork 1
Edinburgh 1
Fiumicino 1
Forlì 1
Helsinki 1
Isola Della Scala 1
Istanbul 1
Landsberg am Lech 1
Leawood 1
Lentini 1
Long Beach 1
Marano Di Napoli 1
Marcianise 1
Mercato San Severino 1
Mountain View 1
Nova Milanese 1
Nürnberg 1
Palermo 1
Philadelphia 1
Rome 1
San Cipriano Picentino 1
San Giuliano 1
San Marco Evangelista 1
Stockholm 1
Taipei 1
Tappahannock 1
Tokyo 1
Turin 1
Vicenza 1
Zogno 1
Zurich 1
Totale 1.580
Nome #
Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the ac profiling technique 71
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE 63
ON THE SAFE OPERATING AREA OF POWER SCHOTTKY DIODES IN AVALANCHE CONDITIONS 63
A METHOD FOR IN-SITU CHARACTERIZATION OF SEMICONDUCTOR INTERFACE DURING A-SI SOLAR CELL FABRICATION 59
Electrothermal issues in 4H-SiC 600 V Schottky diodes in forward mode: Experimental characterization, numerical simulations and analytical modeling 56
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE SURFACE RECOMBINATION VELOCITY 55
Lifetime and resistivity modifications induced by helium implantation in silicon: experimental analysis with the ac profiling technique 55
A NEW TEST STRUCTURE FOR IN-SITU MEASUREMENTS OF INTERFACE RECOMBINATION DURING SURFACE TREATMENTS 54
A new test structure for lifetime profiling in very thick lightly doped silicon material 53
Design criteria for PiN diode using multiple He ion implantation for local lifetime control 50
Studio del fenomeno dell'innesco di instabilita' termiche in MOSFET di potenza per basse tensioni: modellistica analitica e verifica sperimentale 50
Achieving accuracy in modeling the temperature coefficient of threshold voltage in MOS transistors with uniform and horizontally nonuniform channel doping 49
1300 V, 2 ms pulse inductive load switching test circuit with 20 ns selectable crowbar intervention 49
Semiconducto Device with Buffer Layer 48
Analysis of local lifetime control and emitter efficiency control for the design of power PiN diodes 46
Effect of the Collector Design on the IGBT Avalanche Ruggedness: A Comparative Analysis between Punch-Through and Field-Stop Devices 46
All electrical resistivity profiling technique for ion implanted semiconductor materials 45
A VLSI architecture for real time processing of one-bit coded SAR signals 45
An equivalent time temperature mapping system with a 320x256 pixel full frame 100kHz sampling rate 45
A novel time-domain processor for real time SAR operation 43
Characterization of a Point-Wise Close Electric Field Sampling System exploiting the Electro-Optic Effect 43
Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation 43
Experimental measurements of recombination lifetime in proton irradiated power devices 42
Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell 42
Thermal Mapping of Power Devices with a Completely Automated Thermoreflectance Measurement System 41
Analytical model for thermal instability of low voltage power MOS and S.O.A. in pulse operation 41
A novel test structure for the measurement of the multiplication coefficient in silicon 41
Experimental measurement of in-depth secondary defect distribution prodced by Helium implantation in silicon 41
Fast power rectifier design using local lifetime and emitter efficiency control techniques 40
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy 40
Enhancing commercial CAD tools toward the electrothermal simulation of power transistors 39
TherMos3: a 3D electrothermal simulator for smart Power Devices 39
New developments of THERMOS3, a tool for 3D electroTHERmal simulation of smart power MOSfets 39
An experimental power-lines model for digital ASICs based on transmission-lines 39
A new electro-thermal simulation tool for the analysis of bipolar devices and circuits 37
Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography 37
Modeling the onset of thermal instability in low voltage power MOS: An experimental validation 36
An experimental analysis of localized lifetime and resistivity control by helium implant in Si 36
A novel UIS test system with Crowbar feedback for reduced failure energy in power devices testing 36
Development of an Electro-Optic step-by-step Sampling System for ICs Close Electro-Magnetic Field Measurement 34
PiN diode optimal design using local lifetime control 34
He voids lifetime control compared with buffer-layer engineering for a 600V punch-through IGBT 34
Physics of the Negative Resistance in the Avalanche I-V Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness 34
Cell pitch influence on the current distribution during avalanche operation of trench IGBTs: Design issues to increase UIS ruggedness2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) 34
Thermal transient mapping systems for integrated semiconductor devices and circuits 33
Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode 32
Numerical Analysis of Local Lifetime control for High-speed low-loss PiN diode design 31
Design of IGBT with Integral Freewheeling Diode 31
Electrothermal issues in 4H-SiC 600 V Schottky diodes in forward mode: Experimental characterization, numerical simulation and analytical modeling 30
THERMOS3, a tool for 3D electrothermal simulation of smart power MOSFETs 30
A Dynamic Temperature Mapping System with a 320x256 Pixels Frame Size and 100kHz Sampling Rate 30
null 29
Fast Infrared thermal analysis of Smart Power MOSFETS in permanent short circuit operation 29
Electrical measurement of the lattice damage induced by a-particle implantation in silicon 29
Influence of layout geometries on the behavior of 4H-SiC 600V merged PiN Schottky (MPS) rectifiers 28
Thermal instabilities in high current power MOS devices: Experimental evidence, electro-thermal simulations and analytical modeling 28
Modeling and design of power PiN rectifier 27
Experimental Detection and Numerical Validation of Different Failure Mechanisms in IGBTs During Unclamped Inductive Switching 27
The bipolar mode field effect transistor (BMFET) as an optically controlled switch: numerical and experimental results 25
Improved electro-thermal simulation of power devices 25
Thermal simulation and ultrafast IR temperature mapping of a Smart Power Switch for automotive applications 25
Power semiconductor devices - continuous development 24
Thermal modelling and simulation of multicellular power devices 24
Single Chip Implementation of 600V IGBT and Freewheeling Diode 24
Design of a 600V Punch-through IGBT using local lifetime control. On-state voltage drop vs. turn-off time optimization. 24
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE TERMINAL TEST STRUCTURE 24
Two-Dimensional Modeling of On State Voltage Drop in IGBT 23
Thermal instability in power BJT: a radiometric detection of transient temperature maps and electro-thermal simulation 22
Educational issues for power semiconductor devices (invited paper) 22
Efficient thermal models of multicellular devices 22
Detection of localized UIS failure on IGBTs with the aid of lock-in thermography 22
Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching 21
Compact Electro-thermal Modeling and Simulation of Large Area Multicellular Trench-IGBT 21
Electro-thermal instability in multi-cellular Trench-IGBTs in avalanche condition: experiments and simulations 19
THERMOS3, A TOOL FOR 3D ELECTROTHERMAL SIMULATION OF SMART POWER MOSFETS 17
Voltage drops, sawtooth oscillations and HF bursts in Breakdown Current and Voltage waveforms during UIS experiments 15
Experimental study on power consumption in lifetime engineered power diodes 12
Infrared Thermography applied to power electron devices investigation 9
Energy and current crowding limits in avalanche operation of IGBTs 6
Totale 2.807
Categoria #
all - tutte 9.754
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.754


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20195 0 0 0 0 0 0 0 0 0 0 0 5
2019/2020335 83 1 62 3 73 3 2 0 1 5 38 64
2020/2021541 11 62 50 68 64 72 65 3 76 12 55 3
2021/2022480 13 4 2 7 9 15 6 12 63 62 112 175
2022/2023698 98 86 29 98 66 75 3 52 84 71 22 14
2023/2024328 13 56 58 19 18 48 10 93 6 7 0 0
Totale 2.807