IRIS
SPIRITO, PAOLO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 3.322
AS - Asia 2.563
EU - Europa 2.198
SA - Sud America 387
Continente sconosciuto - Info sul continente non disponibili 144
AF - Africa 60
OC - Oceania 2
Totale 8.676
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 3.218
SG - Singapore 1.258
RU - Federazione Russa 831
VN - Vietnam 450
CN - Cina 440
BR - Brasile 318
UA - Ucraina 300
IT - Italia 263
DE - Germania 204
HK - Hong Kong 190
FI - Finlandia 110
FR - Francia 110
NL - Olanda 87
SE - Svezia 84
GB - Regno Unito 77
IE - Irlanda 64
CA - Canada 56
BD - Bangladesh 46
IN - India 36
JP - Giappone 35
AR - Argentina 27
MX - Messico 24
CI - Costa d'Avorio 20
EC - Ecuador 14
TR - Turchia 14
IQ - Iraq 13
PL - Polonia 13
TH - Thailandia 12
ZA - Sudafrica 12
TW - Taiwan 11
AT - Austria 10
ES - Italia 9
KR - Corea 9
LT - Lituania 9
CO - Colombia 8
CR - Costa Rica 6
ID - Indonesia 6
MA - Marocco 6
VE - Venezuela 6
JM - Giamaica 5
MD - Moldavia 5
PH - Filippine 5
PK - Pakistan 5
PY - Paraguay 5
UZ - Uzbekistan 5
AE - Emirati Arabi Uniti 4
CH - Svizzera 4
CZ - Repubblica Ceca 4
GT - Guatemala 4
KE - Kenya 4
UY - Uruguay 4
CL - Cile 3
EG - Egitto 3
LB - Libano 3
NP - Nepal 3
OM - Oman 3
AZ - Azerbaigian 2
BB - Barbados 2
CM - Camerun 2
DO - Repubblica Dominicana 2
HN - Honduras 2
NG - Nigeria 2
PE - Perù 2
PT - Portogallo 2
RO - Romania 2
SI - Slovenia 2
SY - Repubblica araba siriana 2
AF - Afghanistan, Repubblica islamica di 1
AL - Albania 1
AM - Armenia 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CD - Congo 1
CY - Cipro 1
DZ - Algeria 1
EE - Estonia 1
EU - Europa 1
GH - Ghana 1
GM - Gambi 1
GN - Guinea 1
HR - Croazia 1
HU - Ungheria 1
IL - Israele 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
KZ - Kazakistan 1
LU - Lussemburgo 1
ML - Mali 1
MR - Mauritania 1
MU - Mauritius 1
MY - Malesia 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PA - Panama 1
PR - Porto Rico 1
RE - Reunion 1
SA - Arabia Saudita 1
Totale 8.530
Salva come PNG Salva come JPEG
Città #
Singapore 598
San Jose 420
Chandler 365
Jacksonville 279
Ashburn 222
Moscow 197
Hong Kong 185
Beijing 160
Ho Chi Minh City 138
The Dalles 134
Santa Clara 130
Hanoi 105
Los Angeles 93
Council Bluffs 86
Amsterdam 80
Millbury 73
Princeton 73
Lauterbourg 69
Boston 60
Naples 59
Woodbridge 58
Buffalo 52
Wilmington 49
Munich 45
New York 43
Houston 37
Nanjing 37
Kronberg 35
Ann Arbor 31
Dallas 29
Tokyo 29
Boardman 27
São Paulo 25
Seattle 23
Napoli 22
Haiphong 21
Helsinki 20
Ottawa 20
Da Nang 18
Hefei 18
Norwalk 18
Nuremberg 15
Phoenix 15
Chicago 14
Nanchang 14
Redondo Beach 14
Belo Horizonte 13
Brooklyn 13
London 13
Turku 13
Frankfurt am Main 11
San Francisco 11
Stockholm 11
Atlanta 10
Changsha 10
Curitiba 10
Falkenstein 10
Milan 10
Orem 10
Brasília 9
Chennai 9
Des Moines 9
Mexico City 9
Montreal 9
Pune 9
Shanghai 9
Warsaw 9
Washington 9
Ankara 8
Denver 8
Hebei 8
Manchester 8
Philadelphia 8
Shenyang 8
Cagliari 7
Hải Dương 7
Jiaxing 7
Orange 7
Paris 7
Shenzhen 7
Tianjin 7
Baghdad 6
Bamberg 6
Fortaleza 6
Guangzhou 6
Guayaquil 6
Miami 6
Poplar 6
Salvador 6
Augusta 5
Biên Hòa 5
City of London 5
Fremont 5
Ninh Bình 5
Tashkent 5
Can Tho 4
Cape Town 4
Dearborn 4
Duncan 4
Guarulhos 4
Totale 4.676
Salva come PNG Salva come JPEG
Nome #
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE 161
Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the ac profiling technique 161
Compact Electro-thermal Modeling and Simulation of Large Area Multicellular Trench-IGBT 161
1300 V, 2 ms pulse inductive load switching test circuit with 20 ns selectable crowbar intervention 157
Semiconducto Device with Buffer Layer 153
Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography 152
Lifetime and resistivity modifications induced by helium implantation in silicon: experimental analysis with the ac profiling technique 148
Effect of the Collector Design on the IGBT Avalanche Ruggedness: A Comparative Analysis between Punch-Through and Field-Stop Devices 147
A METHOD FOR IN-SITU CHARACTERIZATION OF SEMICONDUCTOR INTERFACE DURING A-SI SOLAR CELL FABRICATION 141
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE SURFACE RECOMBINATION VELOCITY 140
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy 140
A novel UIS test system with Crowbar feedback for reduced failure energy in power devices testing 140
Physics of the Negative Resistance in the Avalanche I-V Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness 139
Studio del fenomeno dell'innesco di instabilita' termiche in MOSFET di potenza per basse tensioni: modellistica analitica e verifica sperimentale 136
An experimental analysis of localized lifetime and resistivity control by helium implant in Si 136
A NEW TEST STRUCTURE FOR IN-SITU MEASUREMENTS OF INTERFACE RECOMBINATION DURING SURFACE TREATMENTS 135
Characterization of a Point-Wise Close Electric Field Sampling System exploiting the Electro-Optic Effect 133
An experimental power-lines model for digital ASICs based on transmission-lines 132
Cell pitch influence on the current distribution during avalanche operation of trench IGBTs: Design issues to increase UIS ruggedness2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) 132
Design criteria for PiN diode using multiple He ion implantation for local lifetime control 130
Achieving accuracy in modeling the temperature coefficient of threshold voltage in MOS transistors with uniform and horizontally nonuniform channel doping 129
A novel time-domain processor for real time SAR operation 128
Experimental measurements of recombination lifetime in proton irradiated power devices 128
A novel test structure for the measurement of the multiplication coefficient in silicon 127
A new test structure for lifetime profiling in very thick lightly doped silicon material 125
Experimental measurement of in-depth secondary defect distribution prodced by Helium implantation in silicon 125
Experimental Detection and Numerical Validation of Different Failure Mechanisms in IGBTs During Unclamped Inductive Switching 125
Thermal Mapping of Power Devices with a Completely Automated Thermoreflectance Measurement System 124
All electrical resistivity profiling technique for ion implanted semiconductor materials 122
An equivalent time temperature mapping system with a 320x256 pixel full frame 100kHz sampling rate 122
Thermal simulation and ultrafast IR temperature mapping of a Smart Power Switch for automotive applications 122
THERMOS3, a tool for 3D electrothermal simulation of smart power MOSFETs 121
Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell 121
He voids lifetime control compared with buffer-layer engineering for a 600V punch-through IGBT 119
Infrared Thermography applied to power electron devices investigation 114
ON THE SAFE OPERATING AREA OF POWER SCHOTTKY DIODES IN AVALANCHE CONDITIONS 114
Voltage drops, sawtooth oscillations and HF bursts in Breakdown Current and Voltage waveforms during UIS experiments 112
A VLSI architecture for real time processing of one-bit coded SAR signals 111
A Dynamic Temperature Mapping System with a 320x256 Pixels Frame Size and 100kHz Sampling Rate 110
Fast Infrared thermal analysis of Smart Power MOSFETS in permanent short circuit operation 109
Analytical model for thermal instability of low voltage power MOS and S.O.A. in pulse operation 109
Single Chip Implementation of 600V IGBT and Freewheeling Diode 109
Electrothermal issues in 4H-SiC 600 V Schottky diodes in forward mode: Experimental characterization, numerical simulation and analytical modeling 108
Thermal transient mapping systems for integrated semiconductor devices and circuits 108
Development of an Electro-Optic step-by-step Sampling System for ICs Close Electro-Magnetic Field Measurement 105
Electrothermal issues in 4H-SiC 600 V Schottky diodes in forward mode: Experimental characterization, numerical simulations and analytical modeling 105
Detection of localized UIS failure on IGBTs with the aid of lock-in thermography 105
Experimental study on power consumption in lifetime engineered power diodes 104
Design of a 600V Punch-through IGBT using local lifetime control. On-state voltage drop vs. turn-off time optimization. 103
Fast power rectifier design using local lifetime and emitter efficiency control techniques 102
Electro-thermal instability in multi-cellular Trench-IGBTs in avalanche condition: experiments and simulations 101
Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation 99
Numerical Analysis of Local Lifetime control for High-speed low-loss PiN diode design 97
Analysis of local lifetime control and emitter efficiency control for the design of power PiN diodes 97
The bipolar mode field effect transistor (BMFET) as an optically controlled switch: numerical and experimental results 96
A new electro-thermal simulation tool for the analysis of bipolar devices and circuits 96
Thermal instability in power BJT: a radiometric detection of transient temperature maps and electro-thermal simulation 93
Design of IGBT with Integral Freewheeling Diode 90
PiN diode optimal design using local lifetime control 90
Electrical measurement of the lattice damage induced by a-particle implantation in silicon 90
THERMOS3, A TOOL FOR 3D ELECTROTHERMAL SIMULATION OF SMART POWER MOSFETS 89
Modeling the onset of thermal instability in low voltage power MOS: An experimental validation 88
New developments of THERMOS3, a tool for 3D electroTHERmal simulation of smart power MOSfets 87
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE TERMINAL TEST STRUCTURE 87
Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode 86
Educational issues for power semiconductor devices (invited paper) 84
TherMos3: a 3D electrothermal simulator for smart Power Devices 84
Modeling and design of power PiN rectifier 84
Enhancing commercial CAD tools toward the electrothermal simulation of power transistors 81
Power semiconductor devices - continuous development 74
Two-Dimensional Modeling of On State Voltage Drop in IGBT 74
Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching 74
Thermal instabilities in high current power MOS devices: Experimental evidence, electro-thermal simulations and analytical modeling 71
Influence of layout geometries on the behavior of 4H-SiC 600V merged PiN Schottky (MPS) rectifiers 69
Improved electro-thermal simulation of power devices 65
Efficient thermal models of multicellular devices 59
Thermal modelling and simulation of multicellular power devices 58
Energy and current crowding limits in avalanche operation of IGBTs 44
null 29
Totale 8.676
Salva come PNG Salva come JPEG
Categoria #
all - tutte 30.293
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 30.293
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022463 0 0 2 7 9 15 6 12 63 62 112 175
2022/2023698 98 86 29 98 66 75 3 52 84 71 22 14
2023/2024415 13 56 58 19 18 48 10 93 6 7 55 32
2024/20251.891 115 107 6 9 89 77 220 135 108 134 717 174
2025/20263.634 395 275 374 364 700 175 438 182 327 262 51 91
2026/2027257 98 75 84 0 0 0 0 0 0 0 0 0
Totale 8.676