DALIENTO, SANTOLO
DALIENTO, SANTOLO
DIPARTIMENTO DI INGEGNERIA ELETTRICA E TECNOLOGIE DELL'INFORMAZIONE
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements
1995 Daliento, Santolo; N., Rinaldi; A., Sanseverino; P., Spirito
Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells
2007 Daliento, Santolo; Mele, L; Bobeico, E; Lancellotti, L; Morvillo, P.
Induced degradation on c-Si solar cells for concentration terrestrial applications
2010 L., Lancellotti; R., Fucci; A., Romano; A., Sarno; Daliento, Santolo
Experimental study on power consumption in lifetime engineered power diodes
2009 Daliento, Santolo; L., Mele; Spirito, Paolo; R., Carta; L., Merlin
Experimental measurements of recombination lifetime in proton irradiated power devices
2000 Daliento, Santolo; A., Sanseverino; Spirito, Paolo; G., Busatto; J., Wyss
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy
2006 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo
An experimental analysis of localized lifetime and resistivity control by helium implant in Si
2005 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; B. N., Limata; R., Carta; L., Bellemo
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System
1998 A., Cutolo; Daliento, Santolo; A., Sanseverino; G. F., Vitale; L., Zeni
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements
1996 Daliento, Santolo; A., Sanseverino; P. M., Sarro; P., Spirito; L., Zeni
Experimental Measurements of Majority and Minority Carrier Lifetime Profile in SI Epilayers by the Use of an Improved OCVD Method
2005 S., Bellone; G. D., Licciardo; Daliento, Santolo; L., Mele
Approximate closed form analytical solution for minority carrier transport in opaque heavily doped regions under illuminated conditions
2006 Daliento, Santolo; L., Mele
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE
2003 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers
1999 Daliento, Santolo; A., Sanseverino; P., Spirito
Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the ac profiling technique
2004 Spirito, Paolo; Daliento, Santolo; A., Sanseverino; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo
A new measurement technique for the conductivity mobility versus injection level in Silicon
1997 S., Bellone; G. V., Persiano; Strollo, ANTONIO GIUSEPPE MARIA; Daliento, Santolo
Modelling of the input I-V curves of bipolar JFET structures showing a negative resistance behaviour
2001 S., Bellone; Daliento, Santolo; A., Sanseverino
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with the Transverse Probe Optical Technique
2000 Daliento, Santolo; Irace, Andrea; Sanseverino, A.; Sirleto, L.; Vitale, G. F.
Modelling and characterization of passivating layers for c-si concentrator cells
2010 Daliento, Santolo; Tari, Orlando; L., Lancellotti; S., Gnanapragasam; E., Bobeico
Two dimensional analysis of a test structure for lifetime profile measurements
1995 Daliento, Santolo; Rinaldi, Niccolo'; Sanseverino, Annunziata; P., Spirito
Bulk lifetime extraction in silicon wafers: comparison between electrical and optical techniques
1997 Cutolo, A.; Daliento, Santolo; Irace, Andrea; Sanseverino, A.; Spirito, P.; Zeni, L.
| Titolo | Tipologia | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|---|
| Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements | 1.1 Articolo in rivista | 1995 | Daliento, Santolo; N., Rinaldi; A., Sanseverino; P., Spirito | |
| Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells | 1.1 Articolo in rivista | 2007 | Daliento, Santolo; Mele, L; Bobeico, E; Lancellotti, L; Morvillo, P. | |
| Induced degradation on c-Si solar cells for concentration terrestrial applications | 1.1 Articolo in rivista | 2010 | L., Lancellotti; R., Fucci; A., Romano; A., Sarno; Daliento, Santolo | |
| Experimental study on power consumption in lifetime engineered power diodes | 1.1 Articolo in rivista | 2009 | Daliento, Santolo; L., Mele; Spirito, Paolo; R., Carta; L., Merlin | |
| Experimental measurements of recombination lifetime in proton irradiated power devices | 4.1 Articoli in Atti di convegno | 2000 | Daliento, Santolo; A., Sanseverino; Spirito, Paolo; G., Busatto; J., Wyss | |
| Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy | 4.1 Articoli in Atti di convegno | 2006 | Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo | |
| An experimental analysis of localized lifetime and resistivity control by helium implant in Si | 4.1 Articoli in Atti di convegno | 2005 | Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; B. N., Limata; R., Carta; L., Bellemo | |
| An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System | 1.1 Articolo in rivista | 1998 | A., Cutolo; Daliento, Santolo; A., Sanseverino; G. F., Vitale; L., Zeni | |
| Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements | 1.1 Articolo in rivista | 1996 | Daliento, Santolo; A., Sanseverino; P. M., Sarro; P., Spirito; L., Zeni | |
| Experimental Measurements of Majority and Minority Carrier Lifetime Profile in SI Epilayers by the Use of an Improved OCVD Method | 1.1 Articolo in rivista | 2005 | S., Bellone; G. D., Licciardo; Daliento, Santolo; L., Mele | |
| Approximate closed form analytical solution for minority carrier transport in opaque heavily doped regions under illuminated conditions | 1.1 Articolo in rivista | 2006 | Daliento, Santolo; L., Mele | |
| AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE | 1.1 Articolo in rivista | 2003 | Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca | |
| An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers | 1.1 Articolo in rivista | 1999 | Daliento, Santolo; A., Sanseverino; P., Spirito | |
| Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the ac profiling technique | 1.1 Articolo in rivista | 2004 | Spirito, Paolo; Daliento, Santolo; A., Sanseverino; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo | |
| A new measurement technique for the conductivity mobility versus injection level in Silicon | 1.1 Articolo in rivista | 1997 | S., Bellone; G. V., Persiano; Strollo, ANTONIO GIUSEPPE MARIA; Daliento, Santolo | |
| Modelling of the input I-V curves of bipolar JFET structures showing a negative resistance behaviour | 1.1 Articolo in rivista | 2001 | S., Bellone; Daliento, Santolo; A., Sanseverino | |
| Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with the Transverse Probe Optical Technique | 4.1 Articoli in Atti di convegno | 2000 | Daliento, Santolo; Irace, Andrea; Sanseverino, A.; Sirleto, L.; Vitale, G. F. | |
| Modelling and characterization of passivating layers for c-si concentrator cells | 4.1 Articoli in Atti di convegno | 2010 | Daliento, Santolo; Tari, Orlando; L., Lancellotti; S., Gnanapragasam; E., Bobeico | |
| Two dimensional analysis of a test structure for lifetime profile measurements | 1.1 Articolo in rivista | 1995 | Daliento, Santolo; Rinaldi, Niccolo'; Sanseverino, Annunziata; P., Spirito | |
| Bulk lifetime extraction in silicon wafers: comparison between electrical and optical techniques | 4.1 Articoli in Atti di convegno | 1997 | Cutolo, A.; Daliento, Santolo; Irace, Andrea; Sanseverino, A.; Spirito, P.; Zeni, L. |