DALIENTO, SANTOLO
DALIENTO, SANTOLO
DIPARTIMENTO DI INGEGNERIA ELETTRICA E TECNOLOGIE DELL'INFORMAZIONE
Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells
2007 Daliento, Santolo; Mele, L; Bobeico, E; Lancellotti, L; Morvillo, P.
Induced degradation on c-Si solar cells for concentration terrestrial applications
2010 L., Lancellotti; R., Fucci; A., Romano; A., Sarno; Daliento, Santolo
Experimental study on power consumption in lifetime engineered power diodes
2009 Daliento, Santolo; L., Mele; Spirito, Paolo; R., Carta; L., Merlin
Experimental measurements of recombination lifetime in proton irradiated power devices
2000 Daliento, Santolo; A., Sanseverino; Spirito, Paolo; G., Busatto; J., Wyss
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy
2006 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo
An experimental analysis of localized lifetime and resistivity control by helium implant in Si
2005 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; B. N., Limata; R., Carta; L., Bellemo
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System
1998 A., Cutolo; Daliento, Santolo; A., Sanseverino; G. F., Vitale; L., Zeni
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements
1996 Daliento, Santolo; A., Sanseverino; P. M., Sarro; P., Spirito; L., Zeni
Experimental Measurements of Majority and Minority Carrier Lifetime Profile in SI Epilayers by the Use of an Improved OCVD Method
2005 S., Bellone; G. D., Licciardo; Daliento, Santolo; L., Mele
Approximate closed form analytical solution for minority carrier transport in opaque heavily doped regions under illuminated conditions
2006 Daliento, Santolo; L., Mele
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE
2003 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers
1999 Daliento, Santolo; A., Sanseverino; P., Spirito
Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the ac profiling technique
2004 Spirito, Paolo; Daliento, Santolo; A., Sanseverino; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with the Transverse Probe Optical Technique
2000 Daliento, Santolo; Irace, Andrea; Sanseverino, A.; Sirleto, L.; Vitale, G. F.
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach
1999 Daliento, Santolo; A., Sanseverino; P., Spirito; L., Zeni
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE TERMINAL TEST STRUCTURE
2002 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca
An Improved Model for the Extraction of Strongly Spatial Dependent Lifetimes with a.c. Lifetime Profiling Technique
1999 Daliento, Santolo; A., Sanseverino; P., Spirito
Approximate analysis of optical properties for ZnO rough surfaces
2014 Daliento, Santolo; Guerriero, Pierluigi; M., Addonizio; A., Antonaia
Two dimensional analysis of a test structure for lifetime profile measurements
1995 Daliento, Santolo; Rinaldi, Niccolo'; Sanseverino, Annunziata; P., Spirito
Analytical three-dimensional modelling of the potential distribution in theEmitter of concentrator solar cells under non uniform illumination
2010 Costagliola, Maurizio; Daliento, Santolo; L., Lancellotti; F., Roca