DALIENTO, SANTOLO

DALIENTO, SANTOLO  

DIPARTIMENTO DI INGEGNERIA ELETTRICA E TECNOLOGIE DELL'INFORMAZIONE  

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Risultati 1 - 20 di 174 (tempo di esecuzione: 0.027 secondi).
Titolo Tipologia Data di pubblicazione Autore(i) File
Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells 1.1 Articolo in rivista 2007 Daliento, Santolo; Mele, L; Bobeico, E; Lancellotti, L; Morvillo, P.
Induced degradation on c-Si solar cells for concentration terrestrial applications 1.1 Articolo in rivista 2010 L., Lancellotti; R., Fucci; A., Romano; A., Sarno; Daliento, Santolo
Experimental study on power consumption in lifetime engineered power diodes 1.1 Articolo in rivista 2009 Daliento, Santolo; L., Mele; Spirito, Paolo; R., Carta; L., Merlin
Improved reverse recovery measurements for the extraction of the recombination lifetime in silicon solar cells 4.1 Articoli in Atti di convegno 2007 Daliento, Santolo; L., Mele; F., Roca; L., Lancellotti; R., Fucci; P., Morvillo; E., Bobeico
PERFORMANCES CHARACTERIZATION OF CONCENTRATION SOLAR CELLS BY MEANS OF I-V AND LIFETIME MEASUREMENTS MADE WITH THE QSSPC TECHNIQUE 4.1 Articoli in Atti di convegno 2006 Daliento, Santolo; L., Mele; L., Lancellotti; P., Morvillo; E., Bobeico; F., Roca; L., Pirozzi
Silicon Solar Cells Process Characterisation by Means of Lifetime Measurements with the Transverse Probe Optical Technique 4.1 Articoli in Atti di convegno 2000 Daliento, Santolo; Irace, Andrea; Sanseverino, A.; Sirleto, L.; Vitale, G. F.
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE SURFACE RECOMBINATION VELOCITY 2.1 Contributo in volume (Capitolo o Saggio) 2002 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; G., Contento; N., Martucciello; I., Nasti; F., Roca
Lifetime and resistivity modifications induced by helium implantation in silicon: experimental analysis with the ac profiling technique 1.1 Articolo in rivista 2008 Daliento, Santolo; Mele, L; Spirito, Paolo; Gialanella, Lucio; Limata, BENEDICTA NORMANNA
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach 1.1 Articolo in rivista 1999 Daliento, Santolo; A., Sanseverino; P., Spirito; L., Zeni
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 1.1 Articolo in rivista 1999 S., Bellone; Daliento, Santolo; A., Sanseverino
Experimental measurements of recombination lifetime in proton irradiated power devices 4.1 Articoli in Atti di convegno 2000 Daliento, Santolo; A., Sanseverino; Spirito, Paolo; G., Busatto; J., Wyss
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy 4.1 Articoli in Atti di convegno 2006 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo
An experimental analysis of localized lifetime and resistivity control by helium implant in Si 4.1 Articoli in Atti di convegno 2005 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; B. N., Limata; R., Carta; L., Bellemo
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 1.1 Articolo in rivista 1998 A., Cutolo; Daliento, Santolo; A., Sanseverino; G. F., Vitale; L., Zeni
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements 1.1 Articolo in rivista 1996 Daliento, Santolo; A., Sanseverino; P. M., Sarro; P., Spirito; L., Zeni
Experimental Measurements of Majority and Minority Carrier Lifetime Profile in SI Epilayers by the Use of an Improved OCVD Method 1.1 Articolo in rivista 2005 S., Bellone; G. D., Licciardo; Daliento, Santolo; L., Mele
Approximate closed form analytical solution for minority carrier transport in opaque heavily doped regions under illuminated conditions 1.1 Articolo in rivista 2006 Daliento, Santolo; L., Mele
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE 1.1 Articolo in rivista 2003 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 1.1 Articolo in rivista 1999 Daliento, Santolo; A., Sanseverino; P., Spirito
Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the ac profiling technique 1.1 Articolo in rivista 2004 Spirito, Paolo; Daliento, Santolo; A., Sanseverino; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo