DALIENTO, SANTOLO
DALIENTO, SANTOLO
DIPARTIMENTO DI INGEGNERIA ELETTRICA E TECNOLOGIE DELL'INFORMAZIONE
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy
2006 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo
An experimental analysis of localized lifetime and resistivity control by helium implant in Si
2005 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; B. N., Limata; R., Carta; L., Bellemo
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers
1999 Daliento, Santolo; A., Sanseverino; P., Spirito
Experimental measurements of recombination lifetime in proton irradiated power devices
2000 Daliento, Santolo; A., Sanseverino; Spirito, Paolo; G., Busatto; J., Wyss
Induced degradation on c-Si solar cells for concentration terrestrial applications
2010 L., Lancellotti; R., Fucci; A., Romano; A., Sarno; Daliento, Santolo
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements
1996 Daliento, Santolo; A., Sanseverino; P. M., Sarro; P., Spirito; L., Zeni
Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells
2007 Daliento, Santolo; Mele, L; Bobeico, E; Lancellotti, L; Morvillo, P.
Approximate closed form analytical solution for minority carrier transport in opaque heavily doped regions under illuminated conditions
2006 Daliento, Santolo; L., Mele
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE
2003 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca
Recombination lifetime degradation in thermally stressed N-type bulk silicon wafer
1997 Cutolo, A.; Daliento, Santolo; Irace, Andrea; Spirito, P.; Zeni, L.
Comments on: Temperature Dependence of Carrier Lifetime in Si wafer
1999 P., Spirito; Daliento, Santolo; A., Sanseverino; L., Zeni
Experimental study on power consumption in lifetime engineered power diodes
2009 Daliento, Santolo; L., Mele; Spirito, Paolo; R., Carta; L., Merlin
WEAR MEASUREMENTS BY MEANS OF RADIOACTIVE ION IMPLANTATION
2002 Daliento, Santolo; Sanseverino, Annunziata; L., Gialanella; Imbriani, Gianluca; Roca, Vincenzo; M., Romano; N., Decesare; A. D., Onofrio; F., Terrasi; H. W., Becker; D., Rogalla; A., Stephan; F., Strieder; Z., Fulop; G., Gyurky; E., Somorjai; Russo, Michele
Raoid-thermal-annealing in forming gas ambient for high efficiency C-Si solar cells passivation oxides
2009 Daliento, Santolo; L., Lancellotti; S., Gnanapragasam; G., Giudicianni; F., Formisano; Guerriero, Pierluigi; E., Bobeico; P., Morvillo; R., Fucci; F., Roca
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE TERMINAL TEST STRUCTURE
2002 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca
Refractive index measurement in TCO layers for micro optoelectronic devices
2014 Daliento, Santolo; Guerriero, Pierluigi; M., Addonizio; A., Antonaia; E., Gambale
A PV AC-module based on coupled-inductors boost DC/AC converter
2014 Coppola, Marino; Guerriero, Pierluigi; DI NAPOLI, Fabio; Daliento, Santolo; Lauria, Davide; DEL PIZZO, Andrea
Modelling of the input I-V curves of bipolar JFET structures showing a negative resistance behaviour
2001 S., Bellone; Daliento, Santolo; A., Sanseverino
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System
1998 A., Cutolo; Daliento, Santolo; A., Sanseverino; G. F., Vitale; L., Zeni
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach
1999 Daliento, Santolo; A., Sanseverino; P., Spirito; L., Zeni
| Titolo | Tipologia | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|---|
| Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy | 4.1 Articoli in Atti di convegno | 2006 | Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo | |
| An experimental analysis of localized lifetime and resistivity control by helium implant in Si | 4.1 Articoli in Atti di convegno | 2005 | Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; B. N., Limata; R., Carta; L., Bellemo | |
| An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers | 1.1 Articolo in rivista | 1999 | Daliento, Santolo; A., Sanseverino; P., Spirito | |
| Experimental measurements of recombination lifetime in proton irradiated power devices | 4.1 Articoli in Atti di convegno | 2000 | Daliento, Santolo; A., Sanseverino; Spirito, Paolo; G., Busatto; J., Wyss | |
| Induced degradation on c-Si solar cells for concentration terrestrial applications | 1.1 Articolo in rivista | 2010 | L., Lancellotti; R., Fucci; A., Romano; A., Sarno; Daliento, Santolo | |
| Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements | 1.1 Articolo in rivista | 1996 | Daliento, Santolo; A., Sanseverino; P. M., Sarro; P., Spirito; L., Zeni | |
| Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells | 1.1 Articolo in rivista | 2007 | Daliento, Santolo; Mele, L; Bobeico, E; Lancellotti, L; Morvillo, P. | |
| Approximate closed form analytical solution for minority carrier transport in opaque heavily doped regions under illuminated conditions | 1.1 Articolo in rivista | 2006 | Daliento, Santolo; L., Mele | |
| AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE | 1.1 Articolo in rivista | 2003 | Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca | |
| Recombination lifetime degradation in thermally stressed N-type bulk silicon wafer | 4.1 Articoli in Atti di convegno | 1997 | Cutolo, A.; Daliento, Santolo; Irace, Andrea; Spirito, P.; Zeni, L. | |
| Comments on: Temperature Dependence of Carrier Lifetime in Si wafer | 1.1 Articolo in rivista | 1999 | P., Spirito; Daliento, Santolo; A., Sanseverino; L., Zeni | |
| Experimental study on power consumption in lifetime engineered power diodes | 1.1 Articolo in rivista | 2009 | Daliento, Santolo; L., Mele; Spirito, Paolo; R., Carta; L., Merlin | |
| WEAR MEASUREMENTS BY MEANS OF RADIOACTIVE ION IMPLANTATION | 2.1 Contributo in volume (Capitolo o Saggio) | 2002 | Daliento, Santolo; Sanseverino, Annunziata; L., Gialanella; Imbriani, Gianluca; Roca, Vincenzo; M., Romano; N., Decesare; A. D., Onofrio; F., Terrasi; H. W., Becker; D., Rogalla; A., Stephan; F., Strieder; Z., Fulop; G., Gyurky; E., Somorjai; Russo, Michele | |
| Raoid-thermal-annealing in forming gas ambient for high efficiency C-Si solar cells passivation oxides | 4.1 Articoli in Atti di convegno | 2009 | Daliento, Santolo; L., Lancellotti; S., Gnanapragasam; G., Giudicianni; F., Formisano; Guerriero, Pierluigi; E., Bobeico; P., Morvillo; R., Fucci; F., Roca | |
| AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE TERMINAL TEST STRUCTURE | 2.1 Contributo in volume (Capitolo o Saggio) | 2002 | Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca | |
| Refractive index measurement in TCO layers for micro optoelectronic devices | 4.1 Articoli in Atti di convegno | 2014 | Daliento, Santolo; Guerriero, Pierluigi; M., Addonizio; A., Antonaia; E., Gambale | |
| A PV AC-module based on coupled-inductors boost DC/AC converter | 4.1 Articoli in Atti di convegno | 2014 | Coppola, Marino; Guerriero, Pierluigi; DI NAPOLI, Fabio; Daliento, Santolo; Lauria, Davide; DEL PIZZO, Andrea | |
| Modelling of the input I-V curves of bipolar JFET structures showing a negative resistance behaviour | 1.1 Articolo in rivista | 2001 | S., Bellone; Daliento, Santolo; A., Sanseverino | |
| An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System | 1.1 Articolo in rivista | 1998 | A., Cutolo; Daliento, Santolo; A., Sanseverino; G. F., Vitale; L., Zeni | |
| Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach | 1.1 Articolo in rivista | 1999 | Daliento, Santolo; A., Sanseverino; P., Spirito; L., Zeni |