IRIS
SASSO, GRAZIA
 Distribuzione geografica
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Continente #
NA - Nord America 310
EU - Europa 73
AS - Asia 32
AF - Africa 1
Totale 416
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Nazione #
US - Stati Uniti d'America 308
IE - Irlanda 29
CN - Cina 28
FI - Finlandia 17
NL - Olanda 11
IT - Italia 8
IN - India 4
DE - Germania 3
GB - Regno Unito 2
MX - Messico 2
SE - Svezia 2
DZ - Algeria 1
RS - Serbia 1
Totale 416
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Città #
Chandler 87
Ashburn 54
Princeton 17
Millbury 13
Nanjing 13
Boston 11
Amsterdam 10
Des Moines 8
Washington 7
Shenyang 5
Corte Madera 4
Pune 4
Wilmington 4
Mountain View 3
Nanchang 3
Napoli 3
Falls Church 2
Fidenza 2
Hanover 2
Hebei 2
Jacksonville 2
Tianjin 2
Ann Arbor 1
Beaverton 1
Beijing 1
Belgrade 1
Boardman 1
Changsha 1
Dresden 1
Dublin 1
Houston 1
Indiana 1
Kunming 1
Mexico City 1
Norwalk 1
Redmond 1
Sunnyvale 1
Tijuana 1
Woodbridge 1
Totale 275
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Nome #
Experimental DC extraction of the base resistance of bipolar transistors: Application to SiGe:C HBTs 39
Advanced thermal resistance simulation of SiGe HBTs including backend cooling effect 39
Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit 35
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's 31
A microcontroller-based pulse generator for isothermal I-V measurements 31
Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs 31
Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation 30
Influence of scaling and emitter layout on the thermal behavior of toward-THz SiGe:C HBTs 28
Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications 26
Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs 25
Impact of scaling on the DC/RF thermal behavior of Terahertz SiGe HBTs 25
Analysis of the thermal behavior of AlGaN/GaN HEMTs 25
Influence of vertical scaling and temperature on impact-ionization effects in SiGe HBTs 24
Evaluation and modeling of voltage stress-induced hot carrier effects in high-speed SiGe HBTs 23
Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs 22
Analytical Models of Effective Dos, Saturation Velocity and High-Field Mobility for SiGe HBTs Numerical Simulation 19
Analysis of the thermal behavior of AlGaN/GaN HEMTs 15
Totale 468
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Categoria #
all - tutte 1.703
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.703
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191 0 0 0 0 0 0 0 0 0 0 0 1
2019/202029 28 0 0 0 0 0 0 0 0 1 0 0
2020/202110 0 0 0 0 0 4 0 4 2 0 0 0
2021/202280 0 0 0 1 0 2 0 3 28 0 7 39
2022/2023162 17 4 0 28 29 24 0 16 25 11 4 4
2023/202493 3 16 3 21 14 35 1 0 0 0 0 0
Totale 468