SASSO, GRAZIA
 Distribuzione geografica
Continente #
NA - Nord America 378
EU - Europa 297
AS - Asia 203
SA - Sud America 25
AF - Africa 3
Totale 906
Nazione #
US - Stati Uniti d'America 371
RU - Federazione Russa 197
SG - Singapore 118
HK - Hong Kong 38
CN - Cina 31
IE - Irlanda 29
BR - Brasile 22
FI - Finlandia 19
DE - Germania 14
IT - Italia 13
NL - Olanda 11
IN - India 7
GB - Regno Unito 5
MX - Messico 5
FR - Francia 4
VN - Vietnam 4
IQ - Iraq 3
SE - Svezia 3
AR - Argentina 1
CA - Canada 1
DZ - Algeria 1
JM - Giamaica 1
KE - Kenya 1
LT - Lituania 1
NP - Nepal 1
PS - Palestinian Territory 1
RS - Serbia 1
UY - Uruguay 1
VE - Venezuela 1
ZA - Sudafrica 1
Totale 906
Città #
Chandler 87
Singapore 62
Ashburn 60
Moscow 60
Hong Kong 38
Santa Clara 35
Princeton 17
Millbury 13
Nanjing 13
Boston 11
Amsterdam 10
Munich 9
Des Moines 8
Washington 7
Shenyang 5
Corte Madera 4
Pune 4
Wilmington 4
Mountain View 3
Nanchang 3
Napoli 3
Belo Horizonte 2
Bordeaux 2
Chicago 2
Falls Church 2
Fidenza 2
Hanover 2
Hebei 2
Ho Chi Minh City 2
Jacksonville 2
Kunming 2
London 2
Tianjin 2
Ann Arbor 1
Baghdad 1
Barra Mansa 1
Beaverton 1
Bedwellty 1
Beijing 1
Belgrade 1
Belém 1
Bengaluru 1
Boardman 1
Campinas 1
Canguçu 1
Caratinga 1
Changsha 1
Corrientes 1
Curaçá Municipality 1
Curitiba 1
Curvelo 1
Dallas 1
Delhi 1
Dresden 1
Dublin 1
Esmeraldas 1
Frankfurt am Main 1
Greater Sudbury 1
Guangzhou 1
Gustavo Adolfo Madero 1
Hanoi 1
Helsinki 1
Hillah 1
Houston 1
Indiana 1
Irecê 1
Kirkuk 1
Lorena 1
Los Angeles 1
Mexico City 1
Milan 1
Minot 1
Montes Claros 1
Montevideo 1
New York 1
Ninh Bình 1
Norwalk 1
Nuremberg 1
Pimenta 1
Pontault-Combault 1
Punto Fijo 1
Ramallah 1
Redenção 1
Redmond 1
Rio de Janeiro 1
Rishikesh 1
Salvador 1
Seattle 1
Stockholm 1
Sunnyvale 1
São Paulo 1
Tampico 1
The Dalles 1
Tijuana 1
Turku 1
Vila Velha 1
Virgem da Lapa 1
Viçosa 1
Woodbridge 1
Totale 546
Nome #
Experimental DC extraction of the base resistance of bipolar transistors: Application to SiGe:C HBTs 67
Advanced thermal resistance simulation of SiGe HBTs including backend cooling effect 67
Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs 66
Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit 65
Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs 60
Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation 59
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's 57
A microcontroller-based pulse generator for isothermal I-V measurements 57
Influence of scaling and emitter layout on the thermal behavior of toward-THz SiGe:C HBTs 55
Analysis of the thermal behavior of AlGaN/GaN HEMTs 53
Influence of vertical scaling and temperature on impact-ionization effects in SiGe HBTs 53
Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications 52
Analysis of the thermal behavior of AlGaN/GaN HEMTs 51
Evaluation and modeling of voltage stress-induced hot carrier effects in high-speed SiGe HBTs 51
Impact of scaling on the DC/RF thermal behavior of Terahertz SiGe HBTs 49
Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs 49
Analytical Models of Effective Dos, Saturation Velocity and High-Field Mobility for SiGe HBTs Numerical Simulation 47
Totale 958
Categoria #
all - tutte 3.770
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.770


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202110 0 0 0 0 0 4 0 4 2 0 0 0
2021/202280 0 0 0 1 0 2 0 3 28 0 7 39
2022/2023162 17 4 0 28 29 24 0 16 25 11 4 4
2023/2024109 3 16 3 21 14 35 1 0 0 1 13 2
2024/2025440 19 4 0 0 24 15 44 30 25 23 215 41
2025/202634 34 0 0 0 0 0 0 0 0 0 0 0
Totale 958