TERRACCIANO, VINCENZO
TERRACCIANO, VINCENZO
DIPARTIMENTO DI INGEGNERIA ELETTRICA E TECNOLOGIE DELL'INFORMAZIONE
A simple electrothermal compact model for SiC MPS diodes including the snapback mechanism
2023 D’Alessandro, Vincenzo; Terracciano, Vincenzo; Borghese, Alessandro; Boccarossa, Marco; Irace, Andrea
A geometry-scalable physically-based SPICE compact model for SiC MPS diodes including the snapback mechanism
2024 Terracciano, Vincenzo; Borghese, Alessandro; Boccarossa, Marco; D’Alessandro, Vincenzo; Irace, Andrea
A geometry-scalable electrothermal compact circuit model of SiC Merged-PiN-Schottky diodes accounting for the snapback mechanism: Application to current surge events
2025 Borghese, Alessandro; Terracciano, Vincenzo; Boccarossa, Marco; Irace, Andrea; D’Alessandro, Vincenzo
Out-of-SOA performance in 3.3 kV SiC MOSFETs: Comparison between planar and quasi-planar trench
2025 Scognamillo, Ciro; Borghese, Alessandro; Melnyk, Kyrylo; Nistor, Iulian; D’Alessandro, Vincenzo; Boccarossa, Marco; Terracciano, Vincenzo; Riccio, Michele; Catalano, Antonio Pio; Breglio, Giovanni; Lophitis, Neo; Antoniou, Marina; Rahimo, Munaf; Irace, Andrea; Maresca, Luca
SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation Through Advanced TCAD Simulations
2024 Maresca, L.; Terracciano, V.; Borghese, A.; Boccarossa, M.; Riccio, M.; Breglio, G.; Mihaila, A.; Romano, G.; Wirths, S.; Knoll, L.; Irace, A.
| Titolo | Tipologia | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|---|
| A simple electrothermal compact model for SiC MPS diodes including the snapback mechanism | 4.1 Articoli in Atti di convegno | 2023 | D’Alessandro, Vincenzo; Terracciano, Vincenzo; Borghese, Alessandro; Boccarossa, Marco; Irace, Andrea | |
| A geometry-scalable physically-based SPICE compact model for SiC MPS diodes including the snapback mechanism | 1.1 Articolo in rivista | 2024 | Terracciano, Vincenzo; Borghese, Alessandro; Boccarossa, Marco; D’Alessandro, Vincenzo; Irace, Andrea | |
| A geometry-scalable electrothermal compact circuit model of SiC Merged-PiN-Schottky diodes accounting for the snapback mechanism: Application to current surge events | 1.1 Articolo in rivista | 2025 | Borghese, Alessandro; Terracciano, Vincenzo; Boccarossa, Marco; Irace, Andrea; D’Alessandro, Vincenzo | |
| Out-of-SOA performance in 3.3 kV SiC MOSFETs: Comparison between planar and quasi-planar trench | 2.1 Contributo in volume (Capitolo o Saggio) | 2025 | Scognamillo, Ciro; Borghese, Alessandro; Melnyk, Kyrylo; Nistor, Iulian; D’Alessandro, Vincenzo; Boccarossa, Marco; Terracciano, Vincenzo; Riccio, Michele; Catalano, Antonio Pio; Breglio, Giovanni; Lophitis, Neo; Antoniou, Marina; Rahimo, Munaf; Irace, Andrea; Maresca, Luca | |
| SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation Through Advanced TCAD Simulations | 2.1 Contributo in volume (Capitolo o Saggio) | 2024 | Maresca, L.; Terracciano, V.; Borghese, A.; Boccarossa, M.; Riccio, M.; Breglio, G.; Mihaila, A.; Romano, G.; Wirths, S.; Knoll, L.; Irace, A. |