RINALDI, NICCOLO'

RINALDI, NICCOLO'  

DIPARTIMENTO DI INGEGNERIA ELETTRICA E TECNOLOGIE DELL'INFORMAZIONE  

Mostra records
Risultati 1 - 20 di 175 (tempo di esecuzione: 0.015 secondi).
Titolo Tipologia Data di pubblicazione Autore(i) File
Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation 4.1 Articoli in Atti di convegno 2009 Sasso, Grazia; G., Matz; C., Jungemann; Rinaldi, Niccolo'
Theoretical analysis and modeling of bipolar transistor operation under reversal base current conditions 4.1 Articoli in Atti di convegno 2009 M., Costagliola; Rinaldi, Niccolo'
Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs 1.1 Articolo in rivista 2010 Sasso, Grazia; Costagliola, Maurizio; Rinaldi, Niccolo'
Analytical Models of Effective Dos, Saturation Velocity and High-Field Mobility for SiGe HBTs Numerical Simulation 4.1 Articoli in Atti di convegno 2010 Sasso, Grazia; G., Matz; C., Jungemann; Rinaldi, Niccolo'
Modeling of high-injection effects in bipolar devices 4.1 Articoli in Atti di convegno 1995 Rinaldi, Niccolo'
Composition grading for base transit time minimization in HBTs: an analytical approach 1.1 Articolo in rivista 1997 P., Rinaldi; Rinaldi, Niccolo'
Validity range estimate of the asymptotic expansion approach for the modeling of minority-carrier injection into heavily doped emitters 1.1 Articolo in rivista 1995 Rinaldi, Niccolo'
Modelling of collector signal delay effects in bipolar transistors 1.1 Articolo in rivista 1999 Rinaldi, Niccolo'
Thermal mapping of new cellular power MOS affected by electro-thermal instability 4.1 Articoli in Atti di convegno 1999 Breglio, Giovanni; F., Frisina; A., Magrì; Rinaldi, Niccolo'; P., Spirito
Non-quasi static modeling of bipolar transistors for CAD applications 4.1 Articoli in Atti di convegno 1997 Rinaldi, Niccolo'
Optimization of base doping profile for minimum transit time in bipolar transistors 4.1 Articoli in Atti di convegno 1997 P., Rinaldi; Rinaldi, Niccolo'
Analysis and modeling of small-signal bipolar transistor operation at arbitrary injection levels 1.1 Articolo in rivista 1998 Rinaldi, Niccolo'; H. C., Degraaff; J. L., Tauritz
Optimizing the Numerical Procedure of Temperature Evaluating from the Heat Diffusion Equation 4.1 Articoli in Atti di convegno 2004 J., Woźny; Rinaldi, Niccolo'; M., Owczarek; J., Nowak
Analytical relations for the base transit time and collector current in BJTs and HBTs 1.1 Articolo in rivista 1997 Rinaldi, Niccolo'
On the modeling of polysilicon emitter bipolar transistors 1.1 Articolo in rivista 1997 Rinaldi, Niccolo'
Fast and simple method for calculating the minority-carrier current in arbitrarily doped semiconductors 1.1 Articolo in rivista 1996 Rinaldi, Niccolo'
Modeling and optimization of shallow and opaque heavily doped emitters for bipolar devices" 1.1 Articolo in rivista 1995 Rinaldi, Niccolo'
Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs 4.1 Articoli in Atti di convegno 2010 G., Sasso; M., Costagliola; Rinaldi, Niccolo'
Modeling of minority-carrier transport in semiconductor regions with position-dependent material parameters at arbitrary injection levels 1.1 Articolo in rivista 1996 Rinaldi, Niccolo'
Small-signal operation of semiconductor devices including self-heating, with application to thermal characterization and instability analysis 1.1 Articolo in rivista 2001 Rinaldi, Niccolo'