Study and experiments regarding adavanced local lifetime control techniques for the design of fast and low loss PiN diodes

The project is directed to the study and to the characterization of the most advanced lifetime control techniques and to the optimal use of such techniques for the design PiN diode. During the research activity, experimental lifetime measurements on silicon irradiated with either he ions or protons, using different process parameters such as ions dose and energy, will be carried out. Lifetime measurements will be performed by using a recently proposed test structure that will be optimized to perform accurate measurements at arbitrary injection level. The proposed measurement technique is able to extract lifetime profile inside the structure and allows a complete characterization of semiconductor recombination centers.