Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring. © 2016 IEEE.
Surface analysis of smart power top metal: IR thermal measurement and source potential mapping / Berkani, M.; Lefebvre, S.; Rostaing, G.; Riccio, Michele; Irace, Andrea; Ruffilli, R.; Dupuy, P.. - 2016-July:(2016), pp. 395-398. [10.1109/ISPSD.2016.7520861]
Surface analysis of smart power top metal: IR thermal measurement and source potential mapping
RICCIO, MICHELE;IRACE, ANDREA;
2016
Abstract
Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring. © 2016 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
