We report a theoretical study about the performances of graphene on semiconductor Schottky barrier solar cells with the aim to show the potentiality of this kind of device. The simulations are carried by a generalized equivalent circuit model, where the circuital parameters are strictly dependent on the physical properties of the graphene and semiconductor which form the Schottky junction. We have realized graphene samples and characterized them by optical and atomic force microscopy, and Raman spectroscopy. Capacitance-voltage measurements have been made on some ad hoc graphene based devices in order to obtain graphene workfunction, a very essential physical parameter. The estimated value is compatible with four layer graphene. This result is in agreement with the morphological characterizations of our material.
Graphene applications in Schottky barrier solar cells / L., Lancellotti; T., Polichetti; F., Ricciardella; O., Tari; S., Gnanapragasam; Daliento, Santolo; G., Di Francia. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 522:(2012), pp. 390-394. [10.1016/j.tsf.2012.09.040]
Graphene applications in Schottky barrier solar cells
DALIENTO, SANTOLO;
2012
Abstract
We report a theoretical study about the performances of graphene on semiconductor Schottky barrier solar cells with the aim to show the potentiality of this kind of device. The simulations are carried by a generalized equivalent circuit model, where the circuital parameters are strictly dependent on the physical properties of the graphene and semiconductor which form the Schottky junction. We have realized graphene samples and characterized them by optical and atomic force microscopy, and Raman spectroscopy. Capacitance-voltage measurements have been made on some ad hoc graphene based devices in order to obtain graphene workfunction, a very essential physical parameter. The estimated value is compatible with four layer graphene. This result is in agreement with the morphological characterizations of our material.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
