A new 2-D analytical model is developed for the current gain β of self-aligned submicrometer bipolar transistors. It takes into account the actual shape of the emitter-base junction, the presence of the built-in electric field and the recombination in the extrinsic base. The model is in good quantitative agreement with the results of numerical simulations and provides an analytical basis for a detailed interpretation of the β-dependence on device physical and geometrical parameters.
Two-dimensional modeling of current gain in downscaled bipolar transistors / Rinaldi, Niccolo'; Strollo, ANTONIO GIUSEPPE MARIA; P., Spirito. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 35:(1992), pp. 1119-1128. [10.1016/0038-1101(92)90013-3]
Two-dimensional modeling of current gain in downscaled bipolar transistors
RINALDI, NICCOLO';STROLLO, ANTONIO GIUSEPPE MARIA;
1992
Abstract
A new 2-D analytical model is developed for the current gain β of self-aligned submicrometer bipolar transistors. It takes into account the actual shape of the emitter-base junction, the presence of the built-in electric field and the recombination in the extrinsic base. The model is in good quantitative agreement with the results of numerical simulations and provides an analytical basis for a detailed interpretation of the β-dependence on device physical and geometrical parameters.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
