A model is developed for the current gain of submicrometre bipolar transistors. The model takes into account the actual shape of the emitter-base junction and the effect of carrier recombination at the interface between the intrinsic and extrinsic base, allowing analytical interpretation of the beta dependence on emitter size and spacer geometry.
Analytical modelling of two-dimensional effects on current gain in small-geometry bipolar transistors / Rinaldi, Niccolo'; Strollo, ANTONIO GIUSEPPE MARIA; P., Spirito. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 27:(1991), pp. 1744-1745. [10.1049/el:19911084]
Analytical modelling of two-dimensional effects on current gain in small-geometry bipolar transistors
RINALDI, NICCOLO';STROLLO, ANTONIO GIUSEPPE MARIA;
1991
Abstract
A model is developed for the current gain of submicrometre bipolar transistors. The model takes into account the actual shape of the emitter-base junction and the effect of carrier recombination at the interface between the intrinsic and extrinsic base, allowing analytical interpretation of the beta dependence on emitter size and spacer geometry.File in questo prodotto:
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