Two-dimensional analytical models for the calculation of the electric field distribution in superjunction power semiconductor devices are presented in this paper. The models show how to analytically calculate the electric field in superjunction devices and give a deep insight in the design of superjunction structures. Numerical two-dimensional simulations validate the proposed models.
Analytical models for electric field in superjunction power devices / Napoli, Ettore. - STAMPA. - (2009), pp. 96-101. (Intervento presentato al convegno XV International Workshop on the Physics of Semiconductor Devices tenutosi a New Delhi (IN) nel 15-19 Dec. 2009).
Analytical models for electric field in superjunction power devices
NAPOLI, ETTORE
2009
Abstract
Two-dimensional analytical models for the calculation of the electric field distribution in superjunction power semiconductor devices are presented in this paper. The models show how to analytically calculate the electric field in superjunction devices and give a deep insight in the design of superjunction structures. Numerical two-dimensional simulations validate the proposed models.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
