Using a field effect device we modified the number of holes in the surface layers of 4 to 10 unit cell Nd1.2Ba1.8Cu3Oy (NBCO) epitaxial films grown on (100) SrTiO3 substrates. The results obtained on a set of 12 devices demonstrate that it is possible to induce reversible changes of the hole density of NBCO films by field effect. It is found that the field effect becomes less pronounced increasing the film thickness. Insulating–superconducting transition was observed in one 8 unit cell NBCO field effect device. © 2004 American Institute of Physics.

Field-effect Tuning of the Hole Density in Nd1.2Ba1.8Cu3Oy Thin Films / Cassinese, Antonio; De Luca, G. M.; Prigiobbo, Antonio; Salluzzo, Marco; Vaglio, Ruggero. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 84:(2004), pp. 3933-3935. [10.1063/1.1745103]

Field-effect Tuning of the Hole Density in Nd1.2Ba1.8Cu3Oy Thin Films

CASSINESE, ANTONIO;G. M. De Luca;PRIGIOBBO, ANTONIO;VAGLIO, RUGGERO
2004

Abstract

Using a field effect device we modified the number of holes in the surface layers of 4 to 10 unit cell Nd1.2Ba1.8Cu3Oy (NBCO) epitaxial films grown on (100) SrTiO3 substrates. The results obtained on a set of 12 devices demonstrate that it is possible to induce reversible changes of the hole density of NBCO films by field effect. It is found that the field effect becomes less pronounced increasing the film thickness. Insulating–superconducting transition was observed in one 8 unit cell NBCO field effect device. © 2004 American Institute of Physics.
2004
Field-effect Tuning of the Hole Density in Nd1.2Ba1.8Cu3Oy Thin Films / Cassinese, Antonio; De Luca, G. M.; Prigiobbo, Antonio; Salluzzo, Marco; Vaglio, Ruggero. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 84:(2004), pp. 3933-3935. [10.1063/1.1745103]
File in questo prodotto:
File Dimensione Formato  
apl_fet.pdf

accesso aperto

Tipologia: Altro materiale allegato
Licenza: Accesso privato/ristretto
Dimensione 393.91 kB
Formato Adobe PDF
393.91 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/337730
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 36
  • ???jsp.display-item.citation.isi??? 35
social impact