Insulated Gate Bipolar Transistor (IGBT) assembly devices for railway transportation were subjected to service conditions thermal fatigue cycling. An advanced ultrasonic (UT) non-destructive inspection (NDI) quality control procedure, providing for complete UT waveform detection and analysis (Full Volume Scanning), was employed to allow for the UT 2½ D axial tomography of the IGBT assembly structure. The integrity of the IGBT assembly thermal joints was verified and critically assessed through UT image analysis. The main challenges for the NDI procedure were represented by the IGBT assembly structure being made of several multi-material layers with thicknesses in the micro manufacture range requiring micro metrology UT techniques.
Quality Management of IGBT Assembly Devices through Micro Feature Ultrasonic NDI / Teti, Roberto; I. L., Baciu. - STAMPA. - (2006), pp. 245-250.
Quality Management of IGBT Assembly Devices through Micro Feature Ultrasonic NDI
TETI, ROBERTO;
2006
Abstract
Insulated Gate Bipolar Transistor (IGBT) assembly devices for railway transportation were subjected to service conditions thermal fatigue cycling. An advanced ultrasonic (UT) non-destructive inspection (NDI) quality control procedure, providing for complete UT waveform detection and analysis (Full Volume Scanning), was employed to allow for the UT 2½ D axial tomography of the IGBT assembly structure. The integrity of the IGBT assembly thermal joints was verified and critically assessed through UT image analysis. The main challenges for the NDI procedure were represented by the IGBT assembly structure being made of several multi-material layers with thicknesses in the micro manufacture range requiring micro metrology UT techniques.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
