The paper presents an analytic bidimensional model for breakdown voltage of recently proposed superjunction structures. The bidimensional model is able to correctly estimate electric field and breakdown voltage giving an insight in optimal design of superjunction devices. Further, in the paper it is shown that simplified formulas based on one-dimensional approximations overestimate breakdown voltage up to a factor two.
Analytical modeling of breakdown voltage of superjunction power devices / Strollo, ANTONIO GIUSEPPE MARIA; Napoli, Ettore. - STAMPA. - (2000), pp. 113-120. (Intervento presentato al convegno ISPS 2000 tenutosi a Prague, Czech Republic nel 30 August - 1st September 2000).
Analytical modeling of breakdown voltage of superjunction power devices
STROLLO, ANTONIO GIUSEPPE MARIA;NAPOLI, ETTORE
2000
Abstract
The paper presents an analytic bidimensional model for breakdown voltage of recently proposed superjunction structures. The bidimensional model is able to correctly estimate electric field and breakdown voltage giving an insight in optimal design of superjunction devices. Further, in the paper it is shown that simplified formulas based on one-dimensional approximations overestimate breakdown voltage up to a factor two.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
