A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently proposed power superjunction (SJ) devices is presented. The model is able to correctly estimate electric field and breakdown voltage giving a deep insight in the design of SJ structures. Design criteria to minimize ON-resistance for a given breakdown voltage are discussed. Numerical 2-D simulations validate the proposed model.
Optimal ON Resistance vs. Breakdown Voltage Trade-off in Superjunction Power Devices: a Novel Analytical Model / Strollo, ANTONIO GIUSEPPE MARIA; Napoli, Ettore. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 48:9(2001), pp. 2161-2167. [10.1109/16.944211]
Optimal ON Resistance vs. Breakdown Voltage Trade-off in Superjunction Power Devices: a Novel Analytical Model
STROLLO, ANTONIO GIUSEPPE MARIA;NAPOLI, ETTORE
2001
Abstract
A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently proposed power superjunction (SJ) devices is presented. The model is able to correctly estimate electric field and breakdown voltage giving a deep insight in the design of SJ structures. Design criteria to minimize ON-resistance for a given breakdown voltage are discussed. Numerical 2-D simulations validate the proposed model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
