Measurement results on the duration of the hightransient- breakdown phase for a silicon-on-insulator (SOI) laterally diffusedmetal–oxide–semiconductor (LDMOS) are presented. The results are important since they give experimental evidence on the practical applicability of the deep-depletion (DD) design technique, which is an innovative concept that has been recently proposed for SOI power devices. Measurements have been conducted on DD SOI LDMOS devices using a nondestructive test circuit that applies a voltage pulse with a definite amplitude and duration on the drain terminal. Measurement results show that the DD effect provides a high breakdown voltage (BV) phase that, as an example, lasts for 15 μs when the applied voltage is 150 V, which is a 65% increase over the static BV, and T = 125 ◦C. The sustained overvoltage and the duration of the high BV phase make the DD effect exploitable for modern power switching circuits.
Duration of the High Breakdown Voltage Phase in Deep Depletion SOI LDMOS / Napoli, Ettore. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 28:8(2007), pp. 753-755. [10.1109/LED.2007.901388]
Duration of the High Breakdown Voltage Phase in Deep Depletion SOI LDMOS
NAPOLI, ETTORE
2007
Abstract
Measurement results on the duration of the hightransient- breakdown phase for a silicon-on-insulator (SOI) laterally diffusedmetal–oxide–semiconductor (LDMOS) are presented. The results are important since they give experimental evidence on the practical applicability of the deep-depletion (DD) design technique, which is an innovative concept that has been recently proposed for SOI power devices. Measurements have been conducted on DD SOI LDMOS devices using a nondestructive test circuit that applies a voltage pulse with a definite amplitude and duration on the drain terminal. Measurement results show that the DD effect provides a high breakdown voltage (BV) phase that, as an example, lasts for 15 μs when the applied voltage is 150 V, which is a 65% increase over the static BV, and T = 125 ◦C. The sustained overvoltage and the duration of the high BV phase make the DD effect exploitable for modern power switching circuits.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.