The radiation hardness of a Polyethylene Naphthalate (PEN) thin film scintillator has been characterized in terms of the light yield loss after irradiation with 11 MeV protons and 1 MeV electrons. The light yield distributions induced by excitation with radioactive sources have been measured on samples irradiated with different doses and the induced light loss has been computed. Results showed the good radiation hardness behaviors of PEN scintillators, with a light yield loss of ~15% at 10 Mrad and ~35% at the maximum delivered dose of 80 Mrad.
Characterization of the Radiation-Induced Damage in a PEN (Polyethylene Naphthalate) Scintillation Detector † / Campajola, M.; Di Capua, F.; Sarnelli, E.; Aloisio, A.. - In: ENGINEERING PROCEEDINGS. - ISSN 2673-4591. - 10:1(2021). ( The 8th International Electronic Conference on Sensors and Applications) [10.3390/ecsa-8-11334].
Characterization of the Radiation-Induced Damage in a PEN (Polyethylene Naphthalate) Scintillation Detector †
Campajola M.
;Di Capua F.;Aloisio A.
2021
Abstract
The radiation hardness of a Polyethylene Naphthalate (PEN) thin film scintillator has been characterized in terms of the light yield loss after irradiation with 11 MeV protons and 1 MeV electrons. The light yield distributions induced by excitation with radioactive sources have been measured on samples irradiated with different doses and the induced light loss has been computed. Results showed the good radiation hardness behaviors of PEN scintillators, with a light yield loss of ~15% at 10 Mrad and ~35% at the maximum delivered dose of 80 Mrad.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
