This paper investigates the Random Telegraph Signal (RTS) in Single Photon Avalanche Diodes (SPADs). The test-chip features SPADs with different architectures implemented in 150 nm CMOS technology. The test-chip has been irradiated with 21 MeV proton beam. RTS occurrence probability has been investigated in two different architectures. RTS measurements allowed to investigate the defect responsible for RTS phenomenon.
Random Telegraph Signal Investigation in Different CMOS SPAD Layouts / Fiore, D.; Campajola, M.; Nappi, C.; Sarnelli, E.; Di Capua, F.. - (2018). ( 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)) [10.1109/NSSMIC.2018.8824585].
Random Telegraph Signal Investigation in Different CMOS SPAD Layouts
Campajola M.;Di Capua F.
2018
Abstract
This paper investigates the Random Telegraph Signal (RTS) in Single Photon Avalanche Diodes (SPADs). The test-chip features SPADs with different architectures implemented in 150 nm CMOS technology. The test-chip has been irradiated with 21 MeV proton beam. RTS occurrence probability has been investigated in two different architectures. RTS measurements allowed to investigate the defect responsible for RTS phenomenon.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
