The calculations regarding band-filling optical nonlinearities in direct band-gap extrinsic semiconductors were carried out. The process was based on the self-consistant determination of pseudochemical potential and it improved with other calculations. These calculations also enabled direct calculation of the non-linear optical suceptibility and fixing of photogenerated electron-hole density as a parameter was not needed. The study showed that the code can easily be extended to calculate the non-linear response of multilayered structures.
Calculations of band-filling optical nonlinearities in extrinsic semiconductors beyond the low injection limit / Lettieri, S.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 95:10(2004), pp. 5419-5428. [10.1063/1.1697634]
Calculations of band-filling optical nonlinearities in extrinsic semiconductors beyond the low injection limit
Lettieri S.
2004
Abstract
The calculations regarding band-filling optical nonlinearities in direct band-gap extrinsic semiconductors were carried out. The process was based on the self-consistant determination of pseudochemical potential and it improved with other calculations. These calculations also enabled direct calculation of the non-linear optical suceptibility and fixing of photogenerated electron-hole density as a parameter was not needed. The study showed that the code can easily be extended to calculate the non-linear response of multilayered structures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
