A novel approach is used to deposit transparent Al-doped zinc oxide (AZO) films by metal-organic (MO) CVD using a Zn/Al safe, friendly to use, easily to handle, multimetal, liquid precursor source. Films are highly crystalline, (002) textured, and exhibit good transparency in the visible region (90%). The effects of Al doping on morphological, optical, and electrical performances are scrutinized. Al doping causes an energy gap (Eg) blue shift and a slight decrease in refractive index. Moreover, it favors sizeable changes in grain size and a surface integrity that are responsible for a reduced carrier mobility. Nevertheless, a minimum resistivity value of 5 × 10-2Ω cm is obtained for thin (∼150nm) AZO films. Time resolved photoluminescence (TRPL) confirms the high crystal quality of deposited films. All features render present AZO films well suited for transparent conductive oxide (TCO) applications and suggest a great potential for the proposed fabrication method. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Structural, optical, and electrical characterization of ZnO and Al-doped ZnO thin films deposited by MOCVD / Fragala, M. E.; Malandrino, G.; Giangregorio, M. M.; Losurdo, M.; Bruno, G.; Lettieri, S.; Amato, L. S.; Maddalena, P.. - In: CHEMICAL VAPOR DEPOSITION. - ISSN 0948-1907. - 15:10-12(2009), pp. 327-333. [10.1002/cvde.200906790]
Structural, optical, and electrical characterization of ZnO and Al-doped ZnO thin films deposited by MOCVD
Lettieri S.;Maddalena P.
2009
Abstract
A novel approach is used to deposit transparent Al-doped zinc oxide (AZO) films by metal-organic (MO) CVD using a Zn/Al safe, friendly to use, easily to handle, multimetal, liquid precursor source. Films are highly crystalline, (002) textured, and exhibit good transparency in the visible region (90%). The effects of Al doping on morphological, optical, and electrical performances are scrutinized. Al doping causes an energy gap (Eg) blue shift and a slight decrease in refractive index. Moreover, it favors sizeable changes in grain size and a surface integrity that are responsible for a reduced carrier mobility. Nevertheless, a minimum resistivity value of 5 × 10-2Ω cm is obtained for thin (∼150nm) AZO films. Time resolved photoluminescence (TRPL) confirms the high crystal quality of deposited films. All features render present AZO films well suited for transparent conductive oxide (TCO) applications and suggest a great potential for the proposed fabrication method. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
