In this paper we present the result of an experimental study concerning the charge collection efficiency (cce) properties of various (Semi Insulating) S.I.-GaAs detectors, when irradiated with 60 keV photons. Some of these detectors, 100 or 200 μm thick, are equipped with a new type of Ohmic contact manufactured by Alenia S.p.A. (Italy), which allows the detector to withstand a bias voltage up to 700 V before break-down. A cce value of 100% has been measured for the 100 μm thick detector. The behavior of a matrix of 36 square pixels, 200X200 μm2 spaced 200 μm, has been investigated for the cross talk between adjacent pixels and for cce uniformity, obtaining good results.
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