In this paper we present the result of an experimental study concerning the charge collection efficiency (cce) properties of various (Semi Insulating) S.I.-GaAs detectors, when irradiated with 60 keV photons. Some of these detectors, 100 or 200 μm thick, are equipped with a new type of Ohmic contact manufactured by Alenia S.p.A. (Italy), which allows the detector to withstand a bias voltage up to 700 V before break-down. A cce value of 100% has been measured for the 100 μm thick detector. The behavior of a matrix of 36 square pixels, 200X200 μm2 spaced 200 μm, has been investigated for the cross talk between adjacent pixels and for cce uniformity, obtaining good results.
Charge collection properties of GaAs detectors for digital radiography / Amendolia, S. R.; Bertolucci, E.; Bottigli, U.; Ciocci, M. A.; Conti, M.; Delogu, P.; Fantacci, M. E.; Maestro, P.; Marzulli, V.; Romeo, N.; Rosso, V.; Russo, P.; Stefanini, A.. - In: PHYSICA MEDICA. - ISSN 1120-1797. - 14:2(1998), pp. 17-19.
Charge collection properties of GaAs detectors for digital radiography
Russo P.;
1998
Abstract
In this paper we present the result of an experimental study concerning the charge collection efficiency (cce) properties of various (Semi Insulating) S.I.-GaAs detectors, when irradiated with 60 keV photons. Some of these detectors, 100 or 200 μm thick, are equipped with a new type of Ohmic contact manufactured by Alenia S.p.A. (Italy), which allows the detector to withstand a bias voltage up to 700 V before break-down. A cce value of 100% has been measured for the 100 μm thick detector. The behavior of a matrix of 36 square pixels, 200X200 μm2 spaced 200 μm, has been investigated for the cross talk between adjacent pixels and for cce uniformity, obtaining good results.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
