GaAs optoelectronic switches as local control of the HV MSGCs strips are being developed for the CMS experiment. The radiation environment inside the CMS tracker will be very high. Typical hadron fluence will be up to ≈1014 cm-2 and ionizing doses as large as 100 kGy during the experiment lifetime. The aim of this work is to test the performance of some GaAs devices in terms of radiation hardness up to the levels of hadron fluence and ionizing doses expected inside the CMS tracker.

Radiation damage tests of GaAs HV switches for MSGCs bias control

Russo P.;
1999

Abstract

GaAs optoelectronic switches as local control of the HV MSGCs strips are being developed for the CMS experiment. The radiation environment inside the CMS tracker will be very high. Typical hadron fluence will be up to ≈1014 cm-2 and ionizing doses as large as 100 kGy during the experiment lifetime. The aim of this work is to test the performance of some GaAs devices in terms of radiation hardness up to the levels of hadron fluence and ionizing doses expected inside the CMS tracker.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11588/892913
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