Fabrication of thin-film multilayer structures by sputtering typically requires a multi-cathode deposition machine. This study proposes a simpler approach based on the radio-frequency power modulation; thin silicon nitride (SiN) thin films were prepared by radio-frequency reactive sputtering in an (Ar + N) atmosphere at room temperature. The samples were analyzed to highlight the effects of different deposition conditions on the morphological and optical properties of the films in the visible and near/mid-infrared (IR) regions. The refractive index of the films was varied from 1.5 - 2.5 (at =800 nm) by tuning the sputtering power. IR reflectance measurements indicated the absence of spurious (oxygen- or hydrogen-based) phases; atomic force microscopy and scanning electron microscopy indicated flat and homogeneous sample surfaces.
Tuning silicon nitride refractive index through radio-frequency sputtering power / De Luca, Daniela; Di Gennaro, Emiliano; De Maio, Davide; D’Alessandro, Carmine; Caldarelli, Antonio; Musto, Marilena; Koral, Can; Andreone, Antonello; Fittipaldi, Rosalba; Di Meo, Valentina; Iodice, Mario; Russo, Roberto. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 737:(2021), p. 138951. [10.1016/j.tsf.2021.138951]
Tuning silicon nitride refractive index through radio-frequency sputtering power
De Luca, Daniela;Di Gennaro, Emiliano;De Maio, Davide;D’Alessandro, Carmine;Caldarelli, Antonio;Musto, Marilena;Koral, Can;Andreone, Antonello;
2021
Abstract
Fabrication of thin-film multilayer structures by sputtering typically requires a multi-cathode deposition machine. This study proposes a simpler approach based on the radio-frequency power modulation; thin silicon nitride (SiN) thin films were prepared by radio-frequency reactive sputtering in an (Ar + N) atmosphere at room temperature. The samples were analyzed to highlight the effects of different deposition conditions on the morphological and optical properties of the films in the visible and near/mid-infrared (IR) regions. The refractive index of the films was varied from 1.5 - 2.5 (at =800 nm) by tuning the sputtering power. IR reflectance measurements indicated the absence of spurious (oxygen- or hydrogen-based) phases; atomic force microscopy and scanning electron microscopy indicated flat and homogeneous sample surfaces.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
