In this paper, we report results on a field-effect-induced light modulation at λ = 1.55 μm in a high-index-contrast waveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (α -Si:H) technology, and it is suitable for monolithic integration in a CMOS IC. The device exploits the free-carrier optical absorption electrically induced in the semiconductor core waveguide. The amorphous silicon waveguiding layer contains several thin dielectric films of amorphous silicon carbonitride (α -SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the on state. © 2006 IEEE.
Electrooptical modulating device based on a CMOS-compatible α-Si:H/α-SiCN multistack waveguide / Rao, S.; Della Corte, F. G.; Summonte, C.; Suriano, F.. - In: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. - ISSN 1077-260X. - 16:1(2010), pp. 173-178. [10.1109/JSTQE.2009.2025604]
Electrooptical modulating device based on a CMOS-compatible α-Si:H/α-SiCN multistack waveguide
Della Corte F. G.;
2010
Abstract
In this paper, we report results on a field-effect-induced light modulation at λ = 1.55 μm in a high-index-contrast waveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (α -Si:H) technology, and it is suitable for monolithic integration in a CMOS IC. The device exploits the free-carrier optical absorption electrically induced in the semiconductor core waveguide. The amorphous silicon waveguiding layer contains several thin dielectric films of amorphous silicon carbonitride (α -SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the on state. © 2006 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
