The linear dependence on temperature of the voltage drop difference measured on two diodes biased at different constant currents has been characterized in a range from room temperature up to 573 K. The realized proportional to absolute temperature sensor shows a good level of linearity and the corresponding rms error lower than 0.3%. Moreover, a maximum sensitivity of 610 μ V/K has been obtained, with an extrapolated output converging to 0 V at T=0 K, in agreement with theory and allowing a single-point temperature calibration.
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes / Rao, S.; Pangallo, G.; Della Corte, F. G.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 36:11(2015), pp. 1205-1208. [10.1109/LED.2015.2481721]
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes
Della Corte F. G.
2015
Abstract
The linear dependence on temperature of the voltage drop difference measured on two diodes biased at different constant currents has been characterized in a range from room temperature up to 573 K. The realized proportional to absolute temperature sensor shows a good level of linearity and the corresponding rms error lower than 0.3%. Moreover, a maximum sensitivity of 610 μ V/K has been obtained, with an extrapolated output converging to 0 V at T=0 K, in agreement with theory and allowing a single-point temperature calibration.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
