A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The linear dependence on temperature of the difference between the forward voltages appearing on two diodes biased at different constant currents, in a range from 30 °C up to 300 °C, was used for temperature sensing. A high sensitivity of 5.11 mV/°C was measured. This is, to the best of our knowledge, the first experimental result about a proportional-to-absoluteerature sensor made with SiC diodes, showing both a good degree of linearity and long-term stability performance.
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes / Rao, S., Pangallo, G., Pezzimenti, F., Della Corte, F.G.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 36:7(2015), pp. 720-722. [10.1109/LED.2015.2436213]
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes
Della Corte F. G.
2015
Abstract
A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The linear dependence on temperature of the difference between the forward voltages appearing on two diodes biased at different constant currents, in a range from 30 °C up to 300 °C, was used for temperature sensing. A high sensitivity of 5.11 mV/°C was measured. This is, to the best of our knowledge, the first experimental result about a proportional-to-absoluteerature sensor made with SiC diodes, showing both a good degree of linearity and long-term stability performance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
