The linear dependence on temperature of the voltage drop VD across a forward-biased 4H-SiC p-i-n diode is investigated experimentally. The results show that the fabricated temperature sensor has a high degree of linearity in the range from room temperature up to 573 K corresponding to a root-mean-square error lower than 0.5%. A maximum sensitivity of 2.66 mV/K was calculated. The low saturation current of the p-i-n diode, well below the forward biasing current also at high temperatures, reduces the nonlinear effects in the VD-T characteristic allowing the design and fabrication of highly linear sensors operating in a wider temperature range.
4H-SiC p-i-n diode as highly linear temperature sensor / Rao, S.; Pangallo, G.; Della Corte, F. G.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 63:1(2016), pp. 414-418. [10.1109/TED.2015.2496913]
4H-SiC p-i-n diode as highly linear temperature sensor
Della Corte F. G.
2016
Abstract
The linear dependence on temperature of the voltage drop VD across a forward-biased 4H-SiC p-i-n diode is investigated experimentally. The results show that the fabricated temperature sensor has a high degree of linearity in the range from room temperature up to 573 K corresponding to a root-mean-square error lower than 0.5%. A maximum sensitivity of 2.66 mV/K was calculated. The low saturation current of the p-i-n diode, well below the forward biasing current also at high temperatures, reduces the nonlinear effects in the VD-T characteristic allowing the design and fabrication of highly linear sensors operating in a wider temperature range.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
