Lateral charge partitioning across the internal base resistance for modelling distributed dynamic lateral effects in SiGe HBTs during large-signal switching / Salvato, R., Krattenmacher, M., Rubino, C., D'Alessandro, V., Schroter, M.. - (2020). (IEEE 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE) Cracow, Poland (held in remote mode) Jul. 2020) [10.1109/EuroSimE48426.2020.9152736].
Lateral charge partitioning across the internal base resistance for modelling distributed dynamic lateral effects in SiGe HBTs during large-signal switching
d'Alessandro, Vincenzo;
2020
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
