Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damage dose. Annealing and cooling have been investigated as possible damage mitigation approaches. We also discuss, through a space radiation simulation, the suitability of such devices on several space mission case-studies.
Proton induced dark count rate degradation in 150-nm CMOS single-photon avalanche diodes / Campajola, M.; Capua, F. D.; Fiore, D.; Sarnelli, E.; Aloisio, A.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 947:(2019), pp. 162722-162728. [10.1016/j.nima.2019.162722]
Proton induced dark count rate degradation in 150-nm CMOS single-photon avalanche diodes
Campajola M.;Aloisio A.
2019
Abstract
Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damage dose. Annealing and cooling have been investigated as possible damage mitigation approaches. We also discuss, through a space radiation simulation, the suitability of such devices on several space mission case-studies.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
