We report on the investigation of the influence of the molecular packing and film morphology on the field-effect charge mobility in 2,3-thienoimide-based oligothiophenes semiconductors (Cn-NT4N). Organic field-effect transistors are realized by implementing both vacuum and solution methods in order to control the solid-state phase of the active layer. Thermal sublimation in a high vacuum chamber and supersonic molecular beam deposition were used as vacuum-based fabrication approaches for preparing thin films, while lithographically controlled wetting was used, as a solution-deposition technique, for the fabrication of the microstructured films. Thermal sublimation leads to thin films with a phase packing showing ambipolar behaviour, while supersonic molecular beam deposition enables, by varying the deposition rate, the formation of two different crystal phases, showing ambipolar and unipolar field-effect behaviours. On the other hand, lithographically controlled wetting enables the formation of Cn-NT4N microstructured active layers and their implementation in field-effect transistors.

Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods / Benvenuti, E.; Gentili, D.; Chiarella, F.; Portone, A.; Barra, M.; Cecchini, M.; Cappuccino, C.; Zambianchi, M.; Lopez, S. G.; Salzillo, T.; Venuti, E.; Cassinese, A.; Pisignano, D.; Persano, L.; Cavallini, M.; Maini, L.; Melucci, M.; Muccini, M.; Toffanin, S.. - In: JOURNAL OF MATERIALS CHEMISTRY. C. - ISSN 2050-7534. - 6:21(2018), pp. 5601-5608. [10.1039/c8tc00544c]

Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods

Chiarella F.;Cecchini M.;Cassinese A.;
2018

Abstract

We report on the investigation of the influence of the molecular packing and film morphology on the field-effect charge mobility in 2,3-thienoimide-based oligothiophenes semiconductors (Cn-NT4N). Organic field-effect transistors are realized by implementing both vacuum and solution methods in order to control the solid-state phase of the active layer. Thermal sublimation in a high vacuum chamber and supersonic molecular beam deposition were used as vacuum-based fabrication approaches for preparing thin films, while lithographically controlled wetting was used, as a solution-deposition technique, for the fabrication of the microstructured films. Thermal sublimation leads to thin films with a phase packing showing ambipolar behaviour, while supersonic molecular beam deposition enables, by varying the deposition rate, the formation of two different crystal phases, showing ambipolar and unipolar field-effect behaviours. On the other hand, lithographically controlled wetting enables the formation of Cn-NT4N microstructured active layers and their implementation in field-effect transistors.
2018
Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods / Benvenuti, E.; Gentili, D.; Chiarella, F.; Portone, A.; Barra, M.; Cecchini, M.; Cappuccino, C.; Zambianchi, M.; Lopez, S. G.; Salzillo, T.; Venuti, E.; Cassinese, A.; Pisignano, D.; Persano, L.; Cavallini, M.; Maini, L.; Melucci, M.; Muccini, M.; Toffanin, S.. - In: JOURNAL OF MATERIALS CHEMISTRY. C. - ISSN 2050-7534. - 6:21(2018), pp. 5601-5608. [10.1039/c8tc00544c]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/809066
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