We present a study of the efficiency of LaAlO3/SrTiO3 nanoscale field effect devices realized in the side gate configuration. We show that a change in the resistance of more than four orders of magnitude and a voltage gain of up to 50 can be obtained with the application of a gate voltage smaller than 1V. At dilution temperatures, the nanodevices become superconducting and we demonstrate the possibility to obtain a superconductor to insulator transition by applying only 200 mV. These results are discussed in the view of applications for quantum electronics.

High efficiency superconducting field effect devices for oxide electronic applications / Massarotti, D.; Miano, A.; Tafuri, F.; Stornaiuolo, D.. - In: SUPERCONDUCTOR SCIENCE & TECHNOLOGY. - ISSN 0953-2048. - 33:3(2020), p. 034007. [10.1088/1361-6668/ab669c]

High efficiency superconducting field effect devices for oxide electronic applications

Massarotti D.;Miano A.;Tafuri F.;Stornaiuolo D.
2020

Abstract

We present a study of the efficiency of LaAlO3/SrTiO3 nanoscale field effect devices realized in the side gate configuration. We show that a change in the resistance of more than four orders of magnitude and a voltage gain of up to 50 can be obtained with the application of a gate voltage smaller than 1V. At dilution temperatures, the nanodevices become superconducting and we demonstrate the possibility to obtain a superconductor to insulator transition by applying only 200 mV. These results are discussed in the view of applications for quantum electronics.
2020
High efficiency superconducting field effect devices for oxide electronic applications / Massarotti, D.; Miano, A.; Tafuri, F.; Stornaiuolo, D.. - In: SUPERCONDUCTOR SCIENCE & TECHNOLOGY. - ISSN 0953-2048. - 33:3(2020), p. 034007. [10.1088/1361-6668/ab669c]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/804827
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